Rare Earth and Transition Metal Doping of Semiconductor Materials
Synthesis, Magnetic Properties and Room Temperature Spintronics
Published on 23. January 2016
470 pages
978-0-08-100060-1 (ISBN)
Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge.
This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures.
Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics.
- Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices
- Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics
- Details the properties of semiconductors for spintronics
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Volkmar Dierolf | Ian Ferguson | John M. Zavada
Rare Earth and Transition Metal Doping of Semiconductor Materials
Synthesis, Magnetic Properties and Room Temperature Spintronics
Book
02/2016
Woodhead Publishing Ltd
€228.17
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Content
Part One: Theory of magnetism in III-V semiconductors1 Computational Nano-materials Design for Nano-Spintronics : Room Temperature Spintronics Applications2 Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models3 Modeling magnetism in Rare Earth-doped Gallium Nitride bulk and nanoparticles Part Two: Magnetic semiconductors based on Rare Earth/Transition Metals4 Prospects for Rare-Earth-Based DMS Alloys and Hybrid Magnetic Rare-Earth/Semiconductor Heterostructures5 Magneto-Optical Properties of Er-doped GaAs6 Gadolinium-doped Gallium-Nitride (GaN:Gd): synthesis routes, structure and magnetism7 MOCVD Growth and Magnetic-Optical Characterization of Er-doped III-N Films8 Growth of Eu-doped GaN and its Magneto-Optical Properties9 Optical and Magnetic Characterization of III-N:Nd grown by MBEPart Three: Properties of magnetic semiconductors and spintronic devices10 Growth of Gadolinium-doped Gallium Nitride (GaN:Gd) and Manganese-doped Gallium Nitride (GaN:Mn) and spin devices 11 Gadolinium-doped III-Nitride Diluted Magnetic Semiconductors for Spintronics Applications12 Ferromagnetic Behavior in Transition Metal Doped III-N Semiconductors13 Bipolar magnetic junction transistors for logic applications
