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Methods of Surface Analysis deals with the determination of the composition of surfaces and the identification of species attached to the surface. The text applies methods of surface analysis to obtain a composition depth profile after various stages of ion etching or sputtering. The composition at the solid-solid interface is revealed by systematically removing atomic planes until the interface of interest is reached, in which the investigator can then determine its composition. The book reviews the effect of ion etching on the results obtained by any method of surface analysis including the effect of the rate of etching, incident energy of the bombarding ion, the properties of the solid, the effect of the ion etching on generating an output signal of electrons, ions, or neutrals. The text also describes the effect of the residual gases in the vacuum environment. The book considers the influence of the sample geometry, of the type (metal, insulator, semiconductor, organic), and of the atomic number can have on surface analysis. The text describes in detail low energy ion scattering spectroscopy, X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectroscopy, and infrared reflection-absorption spectroscopy. The book can prove useful for researchers, technicians, and scientists whose works involve organic chemistry, analytical chemistry, and other related fields of chemistry, such as physical chemistry or inorganic chemistry.
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978-0-444-59645-1 (9780444596451)
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PrefaceIntroductionChapter 1. The Aspects of Sputtering in Surface Analysis Methods I. Introduction II. The Sputtering Process A. Survey B. Sputtering Yields C. Sputter Etching D. Composition Changes Caused by Ion Bombardment E. The Ratio of Sputtered Ions/Neutrals III. Specific Particle Bombardment Aspects A. In ISS B. In SIMS C. In ESCA and AES IV. Outlook ReferencesChapter 2. A Comparison of the Methods of Surface Analysis and their Applications I. Introduction II. Classification of the Methods for Surface Analysis by the Incident Particles used to Produce an Output of Detectable Particles A. Thermal Input with Neutrals Out B. Electrons in C. Ions in D. Photons in E. Neutrals in III. Electric and Magnetic Fields in A. Electric and Magnetic Fields Out B. Electrons Out IV. Surface Waves in A. Neutrals Out V. Conclusions ReferencesChapter 3. Low-Energy Ion Scattering Spectrometry I. Introduction A. General Remarks B. Historical C. Comparison with Ion Scattering at Higher Energies II. Experimental Equipment A. General Requirements B. Ion Source C. Vacuum System and Scattering Chamber D. Electrostatic Analyzer and Ion Detector III. Ion Scattering Principles A. Kinematics B. Scattered Yield C. Ion Neutralization IV. Surface Composition Analysis A. Calibration B. Technological Applications V. Surface Structure A. Shadowing Effects B. Double and Plural Scattering, Surface Defect Analysis VI. Conclusions Note Added in Proof ReferencesChapter 4. Surface Analysis by X-ray Photoelectron Spectroscopy I. Introduction II. Fundamentals A. X-ray Absorption B. Qualitative Analysis C. Quantitation III. Chemical Shifts A. Organic Structural Information B. Inorganic Structural and Chemical Information IV. Instrumentation A. Introduction B. X-ray Sources C. Electron Energy Analyzers D. Detectors E. Vacuum System F. Sample Handling G. Data Acquisition and Processing V. Some Experimental Variables A. Charging Effects B. Charge Compensation C. Depth Profiling Via Ion Etching D. Grazing Angle ESCA VI. Applications A. Organic Surfaces B. Inorganic Surfaces C. Catalysis VII. Summary ReferencesChapter 5. Auger Electron Spectroscopy I. Introduction II. Fundamentals A. The Auger Process B. Auger Electron Escape Depth C. Core Level Ionization Probabilities by Electron Impact D. Matrix Effects III. Experimental Methods A. Electron Energy Analysis B. Signal-to-Noise Considerations C. Thin Film Analysis D. Scanning Auger Microscopy IV. Quantitative Analysis A. Basic Mechanisms and Absolute Measurements B. Measurements with External Standards C. Measurements with Elemental Sensitivity Factors D. Experimental Results V. Applications A. Fundamental Surface Science B. Metallurgy and Materials Science C. Catalytic Activity D. Semiconductor Technology ReferencesChapter 6. Secondary Ion Mass Spectrometry Nomenclature I. Introduction II. Secondary Ion Emission A. Mechanism B. Secondary Ion Yields C. Secondary Ion Species D. Incident Ion Effects III. SIMS Instrumentation A. Instrument Concepts B. Detection Sensitivity C. Trace Analysis D. Ion Imaging E. Primary Ion Beam Considerations F.