Silicide Technology for Integrated Circuits
1st Edition
Published on 23. September 2011
300 pages
978-1-84919-066-4 (ISBN)
Description
Silicide Technology for Integrated Circuits focuses on the task of developing and applying metal silicide technology as it emerges from the scientific to the prototype and manufacturing stages and provides guidance on the application of the latest emerging technology.
The book begins with an overview of silicide technology and moves on to provide the fundamentals of silicide formation, including various processing methods. Topics such as the optical emission properties of Fe silicide and their importance for Si-based optoelectronics are discussed, along with Si-Ge and SOI, which represent two possible substrate frames for the next-generation of Si-based device technology. This invaluable publication also provides comprehensive coverage of the characterisation methods used in silicide technology.
The book begins with an overview of silicide technology and moves on to provide the fundamentals of silicide formation, including various processing methods. Topics such as the optical emission properties of Fe silicide and their importance for Si-based optoelectronics are discussed, along with Si-Ge and SOI, which represent two possible substrate frames for the next-generation of Si-based device technology. This invaluable publication also provides comprehensive coverage of the characterisation methods used in silicide technology.
More details
Series
Language
English
Place of publication
Stevenage
United Kingdom
Target group
College/higher education
Professional and scholarly
ISBN-13
978-1-84919-066-4 (9781849190664)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Lih J. Chen
Silicide Technology for Integrated Circuits
Book
02/2023
Institute of Electrical Engineers of Japan
€156.50
Shipment within 3-4 weeks
Lih J. Chen
Silicide Technology for Integrated Circuits
Book
12/2004
Institution of Engineering and Technology
€161.50
Shipment within 3-4 weeks
Person
Professor Chen received his PhD in physics from UC Berkeley in 1974. He became a faculty member in the Department of Materials Science and Engineering, National Tsing Hua University in 1977. He is currently the Dean, College of Engineering and Chair Professor, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan. Professor Chen has conducted extensive research on integrated circuits thin film materials for almost three decades. His current research interests include interfacial reaction of metal thin films on silicon and Si-Ge alloys, advanced metallisation in integrated circuits as well as nanostructured materials.
Content
Chapter 1: Silicides - an introduction
Chapter 2: Silicide formation
Chapter 3: Titanium silicide technology
Chapter 4: Cobalt silicide technology
Chapter 5: Nickel silicide technology
Chapter 6: Light-emitting iron disilicide
Chapter 7: Silicide contacts for Si/Ge devices
Chapter 8: Silicide technology for SOI devices
Chapter 9: Characterisation of metal silicides
Chapter 2: Silicide formation
Chapter 3: Titanium silicide technology
Chapter 4: Cobalt silicide technology
Chapter 5: Nickel silicide technology
Chapter 6: Light-emitting iron disilicide
Chapter 7: Silicide contacts for Si/Ge devices
Chapter 8: Silicide technology for SOI devices
Chapter 9: Characterisation of metal silicides
