Semiconductor Statistics

Preface Part I. Semiconductors in Thermal Equilibrium Chapter 1. Basic Concepts in the Electron Theory of Solids 1.1 Classical Theories of Metallic Conduction 1.2 Quantum Statistics and the Free Electron Theory 1.3 The Band Theory of Solids 1.4 The Effective Mass of Charge Carriers 1.5 Band Shapes for Some Representative Semiconductors 1.6 Some Varieties of Impurity Center (Flaw) Chapter 2. The Fermi Level-electron Density Equilibrium 2.1 The Fermi-Dirac Integrals 2.2 Interrelation of Free Electron Density and Fermi Level 2.3 Intrinsic Semiconductors 2.4 The Product nopo and ö for Intrinsic and Extrinsic Situations 2.5 Spatial Fluctuations of Carrier Density Chapter 3. Semiconductors Dominated by impurity levels 3.1 Occupancy Factor for Impurity Levels 3.2 Semiconductors Controlled by a Single Monovalent Donor Species 3.3 Semiconductors Dominated by Several Localized Levels 3.4 The Influence of Lattice Defects 3.5 Impurity Bands and the Behavior of an Impurity MetalPart II. Semiconductors Containing Excess Carriers Chapter 4. Factors Affecting Carrier Transition Rates 4.1 Reciprocity of Transition Probabilities 4.2 The Continuity Equations 4.3 Band-to-Band and Band-to-Flaw Transitions Chapter 5. Radiative and Radiationless Recombination 5.1 The Physics of The Two Processes 5.2 Behavior of the Radiative Lifetime Chapter 6. Band-to-band Auger Recombination 6.1 Electron-Electron and Hole-Hole Collisions 6.2 Behavior of the Auger Lifetime when mc Chapter 7. Free Carrier Capture by Flaws 7.1 Flaw Capture Mechanisms 7.2 Behavior of the Extrinsic Lifetime 7.3 Interaction with Both Bands Chapter 8. Recombination Through a Set of Monovalent Flaws 8.1 The Two Continuity Equations 8.2 The Criteria of Trapping 8.3 Lifetime for a Small Flaw Density (The S-R Model) 8.4 Steady State Conditions for Arbitrary Flaw Density 8.5 Transient Decay for Arbitrary Flaw Density Chapter 9. More Complicated Examples of Flaw Recombination 9.1 Multivalent Flaws 9.2 More Than One Kind of Flaw 9.3 The Haynes-Hornbeck Trapping Model 9.4 Recombination and Trapping at Dislocations Chapter 10. Spatial Distribution of Excess Carriers 10.1 Approach to the Space-dependent Problem 10.2 Situations Involving Junctions and Contacts 10.3 Residual Spatial Influences in Homogeneous Samples 10.4 Lifetime in FilamentsAppendixes Appendix A. The Fermi-dirac Distribution Law Appendix B. Tables of the Fermi-dirac Integrals Appendix C. Some Applications and Properties of the Fermi-dirac Integrals C.1. Fermi-Dirac Integrals and Transport Properties C.2. Fermi-Dirac Integrals for Non-standard Bands C.3. Analytic Properties of the Fermi Integrals, and Asymptotic Expansions for Non-degenerate and Degenerate Cases References Index