Surfaces and Interfaces: Physics and Electronics

PrefaceIntroductionDependence of Electronic Properties on Surface Geometry Electronic Properties and Surface Geometry of GaAs and ZnO Surfaces Electronic Structure of Si(111) Surfaces Photoemission Studies of Surface States on Si(111) 2 × l Si(111) 2 × 1 Studies by Angle Resolved Photoemission The p-Bonded Chain Model for Si(111)-(2 × 1) in View of Recent Wavevector-Resolved Electron Energy Loss Spectra The Mott Insulator Model of the Si(111)-(2 × 1) Surface Electronic Surface States at Steps in Si(111) 2 × l A Novel Method for the Study of Optical Properties of Surfaces Low Temperature Leed and Electric Conductivity Measurements for Cleaved Si(111) SurfacesSurface Defects Spot Profile Analysis (LEED) of Defects at Silicon Surfaces Chemisorption-Induced Defects at Interfaces on Compound Semiconductors Surface Defects on SemiconductorsTransition from Chemisorption to Stable Interface Structure The Formation of Interfaces on GaAs and Related Semiconductors: A Reassessment Physics and Electronics of the Noble-Metal/Elemental-Semiconductor Interface Formation: A Status Report Local Structure of Adsorbates on Semiconductor Surfaces Using SEXAFS: A Brief SummarySystematics of Schottky Barriers Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces Schottky Barriers: Model and "Tests" Schottky Barrier Amorphous-Crystalline Interface Formation Computer Modeling of High Barrier Schottky Diodes Applied to Study of the Accuracy of Experimental Barrier DeterminationSilicide Interface Structure Microscopic Properties and Behavior of Suicide Interfaces The Electron States in the Si(111)-Pd Interface: Towards a Reassessment of the Experimental Information Si-Cr and Si-Pd Interface Reaction and Bulk Electronic Structure of Ti, V, Cr, Co, Ni, and Pd Suicides Simple Dipole Model for Barrier Heights of Suicide-Silicon and Metal-Silicon BarriersFormation of Semiconductor Interfaces Far from Equilibrium Vapour Phase Growth of Lattice Matched III-V Compound Semiconductor Interfaces: Some Basic Concepts and Monte-Carlo Computer Simulations Growth and Doping of Gallium Arsenide Using Molecular Beam Epitaxy (MBE): Thermodynamic and Kinetic AspectsTrap States at Interfaces Surface Fermi Level of III-V Compound Semiconductor-Dielectric Interfaces Recombination at Semiconductor Surfaces and Interfaces Interface States at the SiO2-Si Interface Dipoles, Defects and Interfaces Traps at Interfaces Between GaAs n-Type LPE Layers and Different SubstratesHeterostructures and Superlattices The Heterojunction Parameters from a Microscopic Point of View On the Adjustability of the "Abrupt" Heterojunction Band-Gap Discontinuity Effect of Temperature on the Ge/GaAs(110) Interface Formation Valence-Band Discontinuities for Abrupt (110), (100), and (111) Oriented Ge-GaAs Heterojunctions Electron Mobilities in Modulation-Doped GaAs-(AlGa)As Heterostructures New Device Applications of Bandedge Discontinuities in Multilayer Heterojunction Structures Semiconductors with Hetero-n-i-p-i SuperlatticesEffects of Interfaces in Submicron Structures Heterostructure Devices: A Device Physicist Looks at Interfaces Carrier Confinement Effects The Role of Boundaries on High Speed Compound Semiconductor Devices Injection Dependence of Quasiballistic Transport in GaAs at 77 ¿Author IndexSubject Index