Metallic Films for Electronic, Optical and Magnetic Applications

- Contributor contact details - Woodhead Publishing Series in Electronic and Optical Materials - Preface - Part I: Structure and processing of metallic films - 1: X-ray diffraction for characterizing metallic films - Abstract - 1.1 Introduction - 1.2 Reciprocal space - 1.3 Phase identification - 1.4 Chemical order in binary alloys - 1.5 Defects - 1.6 Epitaxy and texture - 1.7 Experimental methods - 1.8 Conclusion and future trends - 2: Crystal orientation mapping in scanning and transmission electron microscopes - Abstract - 2.1 Introduction - 2.2 Electron backscatter diffraction (EBSD) in the scanning electron microscope (SEM) - 2.3 Extraction of relative grain boundary energy from EBSD crystal orientation maps - 2.4 Analysis of grain boundary plane distribution (GBPD) from EBSD crystal orientation maps - 2.5 Precession electron diffraction (PED) in the transmission electron microscope (TEM) - 2.6 Determination of grain boundary character distribution (GBCD) from PED crystal orientation maps - 2.7 Trace analysis of PED crystal orientation maps - 2.8 Conclusion and future trends - 3: Structure formation during deposition of polycrystalline metallic thin films - Abstract - 3.1 Introduction - 3.2 Structural aspects of polycrystalline thin films - 3.3 Main aspects of the physical vapour deposition (PVD) preparation methods applied for the synthesis of polycrystalline metallic thin films - 3.4 Synthesized view of the structure evolution in polycrystalline thin films - 3.5 Fundamental phenomena of structure evolution - 3.6 Case studies - 3.7 Conclusion - 3.8 Acknowledgements - 4: Post-deposition grain growth in metallic films - Abstract - 4.1 Introduction - 4.2 Normal and abnormal grain growth - 4.3 How is grain size measured in thin films? - 4.4 Stagnation of grain growth and the 'universal' experimental grain size distribution - 4.5 Theory and simulation of curvature-driven growth in two dimensions - 4.6 Comparison of experiments and two-dimensional simulations of grain growth with isotropic boundary energy - 4.7 Reduction of surface and elastic strain energies - 4.8 Anisotropy of grain boundary energy - 4.9 Grain boundary grooving - 4.10 Solute drag - 4.11 Triple junction drag - 4.12 Conclusion - 5: Fabrication and characterization of reactive multilayer films and foils - Abstract - 5.1 Introduction - 5.2 Background on self-sustaining reactions and reactive multilayer films and foils - 5.3 Fabrication of reactive multilayer films and foils - 5.4 Microstructures, chemistries and geometries of reactive multilayers - 5.5 Chemical energies stored within reactive multilayer films and foils - 5.6 Thresholds for the ignition of self-propagating reactions - 5.7 Reaction propagation, analytical models, and maximum temperatures - 5.8 Numerical predictions of reaction propagation: steady and unsteady - 5.9 Observations and predictions of rapid intermixing and phase transformations - 5.10 Applications of reactive multilayer foils - 5.11 Conclusion and future trends - 5.12 Sources of further information and advice - 5.13 Acknowledgements - 6: Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology - Abstract - 6.1 Introduction - 6.2 State of the art of complementary metal-oxide-semiconductor (CMOS) technology - 6.3 Silicide formation - 6.4 Electrical contacts - 6.5 Conclusion and future trends - 6.6 Acknowledgments - 7: Disorder-order transformations in metallic films - Abstract - 7.1 Introduction - 7.2 The Fe-Pt system - 7.3 The A1 to L10 transformation in FePt - 7.4 Differential scanning calorimetry (DSC) studies of the A1 to L10 transformation in FePt - 7.5 The A1 to L10FePt transformation kinetics: the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model - 7.6 The A1 to L10 transformation in FePt: the growth mechanism - 7.7 Derivation of expressions for the fraction transformed for three nucleation conditions - 7.