Control Components Using Si, GaAs, and GaN Technologies

Name: Control Components Using Si, GaAs, and GaN Technologies
Brand: Artech House
Price: 167.99 EUR
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Inder J. Bahl(Author)

Artech House (Publisher)

1st Edition

Published on 1. January 2014

324 pages

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978-1-60807-712-0 (ISBN)

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Control Components Using Si, GaAs, and GaN Technologies
Contents
Preface
Chapter 1 Introduction
1.1 History of Control Components
1.2 Types of Control Components
1.3 Solid-State Switching Devices
1.4 Design of Control Components
1.5 Fabrication of Control Components
1.6 Applications
1.7 Book Organization
References
Chapter 2 Control Devices
2.1 PIN Diodes
2.1.1 Operation of PI N Diodes
2.1.2 PIN Diode Models
2.2 GaAs MESFETs
2.2.1 Operation of MESFETs
2.2.2 Linear Switch FET Models
2.2.3 Nonlinear Switch FET Models
2.3 GaAs HE MTs
2.4 GaAs HBTs
2.5 GaN HE MTs
2.6 CMOS Transistors
2.6.1 Operation of CMOS Switch
2.6.2 Various Body Floating Techniques
2.6.3 CMOS Transistor Models
2.7 Other Devices
2.7.1 Schottky Diodes
2.7.2 Varactor Diodes
2.8 Transistor Model Scaling
2.9 Biasing of Switching Devices
2.9.1 Biasing of PIN Diodes
2.9.2 Biasing of Transistors
2.10 Switching Speed
2.10.1 Switching Speed of PIN Diodes
2.10.2 Switching Speed of Transistors
2.11 Comparison of Switching Devices
References
Chapter 3 Switches
3.1 Introduction
3.1.1 Switch Parameters
3.1.2 Devices for Switches
3.1.3 Basic Requirements of a Switch for Wireless Applications
3.2 Design of Switches
3.2.1 Types of Switches
3.2.2 Switch Configurations
3.2.3 Basic Theory of Switches
3.3 Multiport Switches
3.3.1 Multithrow Switches
3.3.2 Matrix Switches
3.3.3 Diversity Switch
3.4 High Isolation Switches
3.5 Broadband Switches
3.6 High-Power Switches
3.6.1 I mpedance Transformation Technique
3.6.2 Stacked FETs Method
3.6.3 Resonant Circuit Technique
3.6.4 GaN HE MT Switches
3.6.5 Power Handling of PIN Diode Switches
3.7 Low Distortion Switches
3.8 Performance of Switch Circuits
3.8.1 PIN Diode Switch Circuits
3.8.2 MESFET Switch Circuits
3.8.3 HEMT Switch Circuits
3.8.4 CMOS Switch Circuits
3.8.5 Comparison of Switch Technologies
3.9 Novel Switch Configurations
3.9.1 Filter-Integrated Switch
3.9.2 Redundant Switch
3.9.3 Switched Variable Power Amplifier
3.9.4 Switches with Integrated Control
3.10 Intermodulation Analysis of Switches
3.10.1 PIN Diode Switches
3.10.2 MESFET Switches
References
Chapter 4 Phase Shifters
4.1 Types of Phase Shifters
4.1.1 Digital Phase Shifters
4.1.2 Analog Phase Shifters
4.1.3 Active Phase Shifters
4.2 Theory of Phase Shifters
4.2.1 Reflection-Type Phase Shifter
4.2.2 Switched-Line Phase Shifter
4.2.3 Loaded-Line Phase Shifters
4.2.4 Switched-Network Phase Shifters
4.2.5 E mbedded-Device Phase Shifters
4.3 Multibit Phase Shifter Circuits
4.3.1 RMS Errors
4.3.2 PIN Diode Phase Shifters
4.3.3 MESFET/HEMT Phase Shifters
4.3.4 CMOS Phase Shifters
4.4 Analog Phase Shifters
4.4.1 Voltage-Controlled Reflection-Type Phase Shifters
4.4.2 Voltage-Controlled Transmission-Type Phase Shifters
4.4.3 Analog Varactor Diode Phase Shifters
4.4.4 Analog CMOS Phase Shifters
4.5 Broadband Phase Shifters
4.5.1 GaAs MESFET/HEMT Broadband Phase Shifters
4.5.2 Broadband CMOS Phase Shifters
4.6 Ultrawideband Phase Shifters
4.7 Millimeter-Wave Phase Shifters
4.7.1 PIN/Schottky Diode Millimeter-Wave Phase Shifters
4.7.2 MESFET/HE MT Millimeter-Wave Phase Shifters
4.7.3 CMOS Millimeter-Wave Phase Shifters
4.8 Active Phase Shifters
4.8.1 Dual-Gate FET Phase Shifters
4.8.2 Switchable-Amplifier Phase Shifters
4.8.3 Vector Modulator Phase Shifters
References
Chapter 5 Attenuators
5.1 Introduction
5.1.1 Types of Attenuators
5.1.2 Theory of Attenuators
5.1.3 Fabrication of Attenuators
5.2 Fixed Value Attenuators
5.2.1 Attenuator Pad
5.2.2 Temperature Variable Attenuator
5.3 Multibit Attenuators
5.3.1 PIN Diode Step Attenuators
5.3.2 GaAs MMIC Step Attenuators
5.3.3 Si CMOS Step Attenuators
5.4 Variable Voltage Attenuators
5.4.1 PIN Diode Variable Attenuators
5.4.2 MESFET Variable Attenuators
5.4.3 CMOS Variable Attenuator
5.4.4 GaN HEMT Attenuator
5.4.5 Linear Voltage Variable Attenuators
5.6 Other Attenuator Circuits
5.6.1 Reflection-Type Attenuators
5.6.2 Balanced Attenuators
5.6.3 Frequency Dependent Attenuators
5.6.4 Phase Compensated Attenuators
5.6.5 CMOS Attenuator with Integrated Switch
5.7 Distortion in Attenuators
5.7.1 PIN Diode Attenuators
5.7.2 FET Attenuators
References
Chapter 6 Limiters
6.1 Introduction
6.1.1 Limiter Characterization
6.1.2 Limiter Types
6.2 PIN Diode Limiters
6.2.1 Analysis of PI N Diode Limiter
6.2.2 Si PI N Diode Limiters in Microstrip Configuration
6.2.3 GaAs PI N Diode Limiters
6.2.4 Matched Limiters
6.3 Schottky Diode Limiters
6.3.1 Analysis of Schottky Diode Limiter
6.3.2 Schottky Diode Design and Limiter Configuration
6.3.3 Broadband High Power Limiters
6.4 Monolithic GaAs Schottky Diode Limiter Circuits
6.4.1 Limiting Amplifiers
6.4.2 10-W Limiter with Embedded LNA
6.5 Other Diode Limiters
6.5.1 BiCMOS Diode Limiter
6.5.2 GaN Schottky Diode Limiters
References
Appendix A: Physical Constants and Frequency Band Designations
Appendix B: Thermal Design of Devices
B.1 Thermal Basics
B.2 Transistor Thermal Design
B.2.1 Cooke Model for Single-Gate Devices
B.2.2 Cook Model for Multiple-Gate Devices
B.2.3 P ulsed Operation
B.2.4 Component Assembly Thermal Design Considerations
References
About the Author
Index

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Control Components Using Si, GaAs, and GaN Technologies

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