Advances in Research and Development

D.W. Greve, GexSi1-x Eptaxial Layer Growth and Application Integrated Circuits: Introduction. GexSi1-x Heterojunctions- General Considerations. Growth by Molecular Beam Epitaxy: MBE Systems. Surface Cleaning and Preparation. Germanium Incorporation and Abruptness. p-type Doping. n-type Doping. Incororation of Adatoms and Growth Temperature Limits. Gas Sources. Growth by Chemical Vapor Deposition: Low-Temperature Growth. Growth Systems. Surface Reactions. Kinetics ofLayer Growth- Hybride Reactants. Kinetics of Layer Growth- Dichlorosilane. Transition Abruptness. Minimum Growth Temperature. Surface Preperation. Overview/Summary. Application to Heterojunction Bipolar Transistors: Operation of HBT. Early Reports of HBTs. MBE-Grown HBT Process. UHV/CVD-Grown HBT Process. Profile Design for the UHV/CVD HBT. HBT Future Prospects. The GexSi1-x Channel MOSFET. Conclusions and Future Prospects. Acknowledgments. References. P.W. Pellegrini and J.R. Jimenez, Thin-FilmEpitaxial Layers for the Detection of Infrared Signals: Introduction. Infrared Bands, Detectors, and Materials: Infrared Spectral Bands. Detectors of Infrared Radiation. Material Considerations for LWIR Detection. Summary of PT/SI Detector Basics. Group-IV Epitaxial Devices for Infrared Detectors: Delta-Doped PT/SI Detectors. SI-Homojunction Detectors. Si/Ge/Si Heterojunction Internal Photoemission (HIP) Detectors. Silicide/SiGe Schottky Detectors. Detectors Involving Epitaxial Silicides. Growth and Fabrication of Si-Based Infrared Detector Structures: Doping and Temperature. Surface Preparation and Cleaning. Uniformity. Silicide/SiGe Fabrication. Conclusions. References. F.D. Shepherd, Platinum Silicide Internal Emission Ifrared Imaging Arrays: Introduction: Staring-Mode Operation. Requirements Imposed by Thermal Infrared Signals. Early Efforts Leading to Current PtSi IR Camera Technology. The Internal Emission Process: Internal Photemission. Thermionic Emission (Dark Current). Internal Field Emission. State of the Art Platinum Silicide Detectors and Arrays: PtSi Spectral Response. Fowler Emission Efficiency. Array Response Uniformity. Excess Low-Frequency Noise. Array Parameters. Infrared Cameras. Future of PtSi Detector and Sensor Development: Array Size. Pixel Dimensions. Optical Absorption in the Silicide Electrode. Detector Fill Factors. Industrial vs. Military Sensor Requirements. Improvement of Emission Efficiency. Extension of Cut-Off Wavelength. General Observations. Summary. E.R. Brown and K.A. McIntosh, III-V Quantum-Well Structures for High-Speed Electronics: Introduction to Quantum-Well Intersubband Detectors: Direct Detection. Heterodyne Detection. Quantum-Well Detector Design and Intersubband Absorption: Quantum-Well Energy Levels. Epitaxial Growth. Intersubband Absorption Measurement Techniques. Intersubband Absorption Results. MQW Detector Fabrication and DC Response Characteristics: Fabrication and Packaging. Dark Current. Spectral and Absolute Responsivity.Photoconductive Gain. External Quantum Efficiency. Electrical Bandwidth and Optical-Heterodyne Experiments: Photoelectron Generations- Recombination Noise Technique. Diode-Laser Mixing Technique. Microwave Rectification Technique. Discussion of Bandwidthand Lifetime. Heterodyne Sensitivity Technique. Heterodyne Sensitivity Results. Applications: Instrumental Resolution and Sensitivity. High-Resolution Molecular Spectroscopy. Long-Range, High-Data-Rate Communications. Improvements in MAW Heterodyne Detectors: Enhancement of External Quantum Efficiency. Design of Detectors Having Lifetime-Limited Electrical Bandwidth. A.G.U. Perera, J-W. Choe, and M.H. Francombe, Quantum-Well Devices for Infrared Emission: Introduction and Background. Quantum-Wells in Interband-Type IR Sources: Role of Size ad Strain Effects- General. MQW Heterostructures for Mid-Wave IR- Examples. Intersubband Transition Processes for IR Emission: Background and Summary. Radiative Transitions and Population Inversion.