Advances in Electronics and Electron Physics
Academic Press
Published on 24. June 1982
412 pages
978-0-08-057723-4 (ISBN)
Description
Advances in Electronics and Electron Physics
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Ladislaus Marton | C. Marton
Advances in Electronics and Electron Physics: v. 58
Book
04/1982
Academic Press
€80.47
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Content
- Cover
- Contents
- Contributors of Volume 58
- Publisher's Foreword
- Foreword
- Chapter 1. Modeling of Irradiation-Induced Changes in the Electrical Properties of Metal-Oxide-Semiconductor Structures
- I. Brief History and Introduction
- II. Modeling Considerations
- III. General Relationships between Vfb and Vgr(D)
- IV. Simple Descriptive Models
- V. Complete Computer Simulation
- VI. Discussion
- Nomenclature
- References
- Chapter 2. Point Defects in Gap, GaAs, and InP
- I. Introduction
- II. Experimental Techniques for Point Defect Assessment
- III. Donors and Acceptors
- IV. Intrinsic Defects
- V. 3d Transition Metals
- References
- Chapter 3. Collisional Detachment of Negative Ions
- I. Introduction
- II. Nomenclature and Experimental Techniques
- Ill. Atomic Reactants
- IV. Molecular Reactants
- V. Summary
- References
- Chapter 4. Ion Implantation for Very Large Scale Integration
- 1. Introduction
- 2. Range Distributions of Implanted Ions
- 3. Annealing of Implanted Layers
- 4. Nondoping and Other New Applications of Implantation
- 5. Application of Implantation to Devices
- 6. Conclusions
- References
- Chapter 5. Stimulated Cerenkov Radiation
- I. Introduction
- II. Theory
- III. Experiment
- IV. Conclusion
- References
- Chapter 6. Materials Considerations for Advances in Submicron Very Large Scale Integration
- I. Introduction
- II. Submicron MOSFETs
- III. Submicron MESFETs
- IV. Switching of High-Speed Logic
- V. Band Structure Considerations
- VI. Comparisons and Limitations of Logic for Ultra-Large-Scale Integration
- References
- Author Index
- Subject Index
