Tunneling Field Effect Transistor Technology
Published on 15. April 2016
Book
Hardback
IX, 213 pages
978-3-319-31651-2 (ISBN)
Description
This book provides a single-source reference to the state-of-the art in
tunneling field effect transistors (TFETs). Readers will learn the TFETs
physics from advanced atomistic simulations, the TFETs fabrication process and
the important roles that TFETs will play in enabling integrated circuit designs
for power efficiency.
More details
Edition
1st ed. 2016
Language
English
Place of publication
Cham
Switzerland
Publishing group
Springer International Publishing
Target group
Professional and scholarly
Illustrations
122 farbige Abbildungen, 25 s/w Abbildungen
IX, 213 p. 147 illus., 122 illus. in color.
Dimensions
Height: 241 mm
Width: 160 mm
Thickness: 18 mm
Weight
506 gr
ISBN-13
978-3-319-31651-2 (9783319316512)
DOI
10.1007/978-3-319-31653-6
Schweitzer Classification
Other editions
Additional editions
Lining Zhang | Mansun Chan
Tunneling Field Effect Transistor Technology
Book
04/2018
Springer
€106.99
Shipment within 10-15 days
Lining Zhang | Mansun Chan
Tunneling Field Effect Transistor Technology
E-Book
04/2016
1st Edition
Springer
€96.29
Available for download
Content
Steep
Slope Devices and TFETs.- Tunnel-FET
Fabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for Digital
Applications.- Atomistic Simulations of Tunneling FETs.- Quantum Transport
Simulation of III-V TFETs with Reduced-Order
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Method.- Carbon Nanotube TFETs: Structure
Optimization with Numerical Simulation.