
Materials Science and Technology for Nonvolatile Memories: Volume 1071
Materials Research Society (Publisher)
Published on 28. July 2008
Book
Hardback
240 pages
978-1-60511-041-7 (ISBN)
Description
Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.
More details
Series
Language
English
Place of publication
New York
United States
Target group
Professional and scholarly
Dimensions
Height: 235 mm
Width: 157 mm
Thickness: 18 mm
Weight
504 gr
ISBN-13
978-1-60511-041-7 (9781605110417)
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Schweitzer Classification
Other editions
Additional editions

Dirk J. Wouters | Seungbum Hong | Steven Soss
Materials Science and Technology for Nonvolatile Memories: Volume 1071
Volume 1071
Book
06/2014
Cambridge University Press
€39.40
Shipment within 15-20 days
Persons
Editor
Argonne National Laboratory, Illinois
Argonne National Laboratory, Illinois
Content
Preface; Acknowledgments; Part I. Advanced Flash Memory; Part II. Oxide Resistive Switching Memory; Part III. Organic Resistive Switching Memory; Part IV. Nanoparticle-Based Organic Memory; Part V. Organic Ferroelectric Memory; Part VI. New Phase Change Memory and Deposition Methods; Part VII. Future Explorative Memory Concepts; Author index; Subject index.