Nanoelectronics and Information Technology
Advanced Electronic Materials and Novel Devices
2nd Edition
Published on 17. February 2005
Book
Hardback
995 pages
978-3-527-40542-8 (ISBN)
Description
Providing an introduction to electronic materials and device concepts for the major areas of current and future information technology, the value of this book lies in its focus on the underlying principles. Illustrated by contemporary examples, these basic principles will hold, despite the rapid developments in this field, especially emphasizing nanoelectronics.
There is hardly any field where the links between basic
science and application are tighter than in nanoelectronics & information technology. As an example, the design of resonant tunneling transistors, single electron devices or molecular electronic structures is simply inconceivable without delving deep into quantum mechanics.
This textbook is primarily aimed at students of physics,
electrical engineering and information technology, as well as material science in their 3rd year and higher. It is equally of interest to professionals wanting a broader overview of this hot topic.
"Nanoelectronics and Information Technology" by Rainer Waser and his colleagues is an outstanding compendium of
information about an exciting new field. Owing to its high quality and complete coverage of the many topics in this area, this well referenced book will have a long and very useful life as a primary text for students experienced and new in nanoelectronics. It is a very impressive book." (Richard Siegel)
There is hardly any field where the links between basic
science and application are tighter than in nanoelectronics & information technology. As an example, the design of resonant tunneling transistors, single electron devices or molecular electronic structures is simply inconceivable without delving deep into quantum mechanics.
This textbook is primarily aimed at students of physics,
electrical engineering and information technology, as well as material science in their 3rd year and higher. It is equally of interest to professionals wanting a broader overview of this hot topic.
"Nanoelectronics and Information Technology" by Rainer Waser and his colleagues is an outstanding compendium of
information about an exciting new field. Owing to its high quality and complete coverage of the many topics in this area, this well referenced book will have a long and very useful life as a primary text for students experienced and new in nanoelectronics. It is a very impressive book." (Richard Siegel)
Reviews / Votes
"... is an outstanding compendium of information about an exciting new field. Owing to its high quality and complete coverage of the many topics in this area, this well referenced book will have a long and very useful life as a primary text for students experienced and new in nanoelectronics. It is a very impressive book." Prof. Richard Siegel, US Nano-InitiativeMore details
Edition
2., korrigierte Auflage
Language
English
Place of publication
Weinheim
Germany
Target group
Professional and scholarly
Materialwissenschaftler, Chemiker, Physiker, Institutsbibliotheken
Edition type
Revised edition
Illustrations
718
47 s/w Tabellen, 430 s/w Abbildungen, 718 farbige Abbildungen
Illustrations (some col.)
Dimensions
Height: 21 cm
Width: 20 cm
Thickness: 48 mm
Weight
2932 gr
ISBN-13
978-3-527-40542-8 (9783527405428)
Schweitzer Classification
Other editions
New editions
Rainer Waser
Nanoelectronics and Information Technology
Advanced Electronic Materials and Novel Devices
Book
04/2012
3rd Edition
Wiley-VCH
€99.90
Article is exhausted; no reprint
Previous edition
Rainer Waser
Nanoelectronics and Information Technology
Advanced Electronic Materials and Novel Devices
Book
03/2003
1st Edition
Wiley-VCH
€74.90
Article exhausted; check for reprint
Person
The Editor:
Rainer Waser is Professor of Physics at the faculty for Electrical Engineering and Information Technology of the RWTH Aachen University and Director at the Institute of Solid State Research (IFF) at the HGF
Research Center Jülich, Germany.
In 1984, he received his PhD in physical chemistry at the University of Darmstadt, and worked at the Philips Research Laboratory, Aachen, until he was
appointed professor in 1992. His research group is focused on fundamental aspects of electronic materials and on such integrated devices as non-volatile memories, specifically ferroelectric memories, logic devices, sensors and actuators. Throughout, he has been
collaborating with major semiconductor industries in Europe, the US, and the Far East. He has been honored with the IEEE "Ferroelectrics Recognition Award 2000".
Rainer Waser has organized several international conferences, published about 200 technical papers and holds ten patents. Since 2001, he has been the coordinator of the research program Information Technology and Nanoelectronics within the German National Research Centers (Helmholtz-Gemeinschaft).
Rainer Waser is Professor of Physics at the faculty for Electrical Engineering and Information Technology of the RWTH Aachen University and Director at the Institute of Solid State Research (IFF) at the HGF
Research Center Jülich, Germany.
In 1984, he received his PhD in physical chemistry at the University of Darmstadt, and worked at the Philips Research Laboratory, Aachen, until he was
appointed professor in 1992. His research group is focused on fundamental aspects of electronic materials and on such integrated devices as non-volatile memories, specifically ferroelectric memories, logic devices, sensors and actuators. Throughout, he has been
collaborating with major semiconductor industries in Europe, the US, and the Far East. He has been honored with the IEEE "Ferroelectrics Recognition Award 2000".
Rainer Waser has organized several international conferences, published about 200 technical papers and holds ten patents. Since 2001, he has been the coordinator of the research program Information Technology and Nanoelectronics within the German National Research Centers (Helmholtz-Gemeinschaft).
Content
FUNDAMENTALS
Dielectric and Optical Properties (S. Hoffmann-Eiffert,IFF,Jülich, Germany)
Ferroelectrics (S. Trolier-McKinstry,Department of Material Science,University Park,USA; D. Richter,IFF,Jülich,Germany)
Electronic Properties and Quantum Effects (H. Lüth,ISG,Jülich,Germany)
Magnetoelectronics (P.Grünberg,D. Bürgler,IFF,Jülich, Germany)
Organic Molecules (P. Atkins,Oxford,UK; R. Waser,Aachen, Germany)
Neurons (U. Kaupp,A. Baumann,IBI,Jülich,Germany)
Circuit and System Design (M. Dolle,Infineon,Munich, Germany)
TECHNOLOGY AND ANALYSIS
Deposition Methods (P. Ehrhart,IFF,Jülich,Germany)
Lithography (S. Okazaki,EUV Lithography Laboratory,Atsugi,Japan;J. Moers,ISG,Jülich,Germany)
Material Removing Techniques (S. McClatchie,LAM Research, Fremont,USA;S. Schneider,IFF,Jülich,Germany)
Diffraction and Fluorescence Methods (O. Seeck,IFF,Jülich,Germany)
Scanning Probe Techniques (P. Ebert,K. Szot,IFF,Jülich,Germany;A. Roelofs,Aachen,Germany)
LOGIC DEVICES
Silicon MOSFETs (E. Young,Philips Semiconductor,IMEC,Leuven,Belgium;S. Mantl,ISG,Jülich,Germany;P. Griffin,SNF,Stanford,Germany)
Ferroelectric FETs (H. Ishiwara,Inst. Technology,Tokyo,Japan;H. Kohlstedt,IFF,Jülich,Germany)
Quantum Transport Devices (K. Maezawa,School of Engineering,Nagoya,Japan;A. Förster,ISG,Jülich,Germany)
Single-Electron Devices for Logic Applications (K. Uchida,Advanced LSI Technology Laboratory,Yokohama,Japan)
Superconductor Digital Electronics (M. Siegel,IEGI,Karlsruhe,Germany)
Quantum Computing Using Superconductors (A. Ustinov,Institute of Experimental Physics,Erlangen,Germany)
Carbon Nanotubes for Data Processing (J. Appenzeller,IBM Watson Research Center,Yorktown Heights,USA;E. Joselevich,Weizman Inst.,Rehovot,Israel;W. Hönlein,Infineon,Munich,Germany)
Molecular Electronics (M. Mayor, H. Weber,Institute for Nanotechnology,Karlsruhe,Germany)
RANDOM ACCESS MEMORIES
High-Permittivity Materials for DRAMs (A. Kingon,Department of Material Science,Raleigh,USA;H. Schroeder,IFF,Jülich,Germany)
Ferroelectric RAMs (S. Summerfelt,Texas Instruments,Dallas,USA;U. Böttger,IWE,Aachen,Germany)
Magnetoresistive RAMs (J. Slaughter,M. DeHerrera, Motorola,Tempe,USA;H. Dürr, BESSY,Berlin,Germany)
MASS STORAGE DEVICES
Hard Discs (A. Dietzel,IBM Europe, Mainz,Germany)
Magneto-Optical Discs (K. Röll,Experimental Physics,Kassel,Germany)
Rewriteable DVD based on Phase Change Materials (M. Wuttig,Experimental Physics,Aachen,Germany)
Holographic 3D Memories (M. Imlau,Physics Department,Osnabrück,Germany; T. Bieringer,Bayer AG,Leverkusen,Germany; S. G. Odoulov,National Academy of Sciences,Kiev,Ukraina;Th. Woike,Institute of Mineralogy,Cologne,Germany)
AFM-based Mass Storage Concepts (P. Vettiger,M. Despont,U. Dürig,M. A. Lantz,H. E. Rothuizen,G. K. Binnig,IBM Research Laboratory,Rueschlikon,Switzerland)
DATA TRANSMISSION AND INTERFACES
Transmission on Chip and Board Level (M. Mokwa,IWE,Aachen,Germany)
Lightwave Systems (Ch. Buchal,IFF,Jülich,Germany)
Microwave Communication Systems (N. Klein,ISG,Jülich,Germany)
Neuroelectronic Interfacing (P. Fromherz,MPI Biochemistry,München,Germany)
SENSOR ARRAYS AND IMAGING SYSTEMS
Optical 3-D Time-of-Flight Imaging System (B. J. Hosticka,W. Brockherde,R. Jeremias,Institute of Microelectronic Circuits,Duisburg,Germany)
Pyroelectric Detector Arrays for IR Imaging (P. Muralt,EPFL,Lausanne,Switzerland;H. R. Beratan,Raytheon Systems,Texas,USA)
Electronic Noses (D. Kohl,Physics Department,Giessen,Germany)
Tactile Sensors (K. Machida,NTT Microsystem Integration Laboratories,Atsugi,Japan;J. Kent,Elo TouchSystems Inc., Fremont,California,USA)
DISPLAYS
Liquid Crystal Displays (S.-T. Wu, School of Optics,Orlando,USA;R. Zorn,IFF, Jülich,Germany)
Organic LED Displays (S. R. Forrest,Department of Electrical Engineering,Princeton,USA;M. Pfeiffer,IAPP,Dresden,Germany)
Plasma and Field-Emission Displays (P. Bachmann et al. Philips Research,Aachen,Germany)
Electronic Paper (S. Jungk,D. Theiss,Infineon,Munich,Germany)
Dielectric and Optical Properties (S. Hoffmann-Eiffert,IFF,Jülich, Germany)
Ferroelectrics (S. Trolier-McKinstry,Department of Material Science,University Park,USA; D. Richter,IFF,Jülich,Germany)
Electronic Properties and Quantum Effects (H. Lüth,ISG,Jülich,Germany)
Magnetoelectronics (P.Grünberg,D. Bürgler,IFF,Jülich, Germany)
Organic Molecules (P. Atkins,Oxford,UK; R. Waser,Aachen, Germany)
Neurons (U. Kaupp,A. Baumann,IBI,Jülich,Germany)
Circuit and System Design (M. Dolle,Infineon,Munich, Germany)
TECHNOLOGY AND ANALYSIS
Deposition Methods (P. Ehrhart,IFF,Jülich,Germany)
Lithography (S. Okazaki,EUV Lithography Laboratory,Atsugi,Japan;J. Moers,ISG,Jülich,Germany)
Material Removing Techniques (S. McClatchie,LAM Research, Fremont,USA;S. Schneider,IFF,Jülich,Germany)
Diffraction and Fluorescence Methods (O. Seeck,IFF,Jülich,Germany)
Scanning Probe Techniques (P. Ebert,K. Szot,IFF,Jülich,Germany;A. Roelofs,Aachen,Germany)
LOGIC DEVICES
Silicon MOSFETs (E. Young,Philips Semiconductor,IMEC,Leuven,Belgium;S. Mantl,ISG,Jülich,Germany;P. Griffin,SNF,Stanford,Germany)
Ferroelectric FETs (H. Ishiwara,Inst. Technology,Tokyo,Japan;H. Kohlstedt,IFF,Jülich,Germany)
Quantum Transport Devices (K. Maezawa,School of Engineering,Nagoya,Japan;A. Förster,ISG,Jülich,Germany)
Single-Electron Devices for Logic Applications (K. Uchida,Advanced LSI Technology Laboratory,Yokohama,Japan)
Superconductor Digital Electronics (M. Siegel,IEGI,Karlsruhe,Germany)
Quantum Computing Using Superconductors (A. Ustinov,Institute of Experimental Physics,Erlangen,Germany)
Carbon Nanotubes for Data Processing (J. Appenzeller,IBM Watson Research Center,Yorktown Heights,USA;E. Joselevich,Weizman Inst.,Rehovot,Israel;W. Hönlein,Infineon,Munich,Germany)
Molecular Electronics (M. Mayor, H. Weber,Institute for Nanotechnology,Karlsruhe,Germany)
RANDOM ACCESS MEMORIES
High-Permittivity Materials for DRAMs (A. Kingon,Department of Material Science,Raleigh,USA;H. Schroeder,IFF,Jülich,Germany)
Ferroelectric RAMs (S. Summerfelt,Texas Instruments,Dallas,USA;U. Böttger,IWE,Aachen,Germany)
Magnetoresistive RAMs (J. Slaughter,M. DeHerrera, Motorola,Tempe,USA;H. Dürr, BESSY,Berlin,Germany)
MASS STORAGE DEVICES
Hard Discs (A. Dietzel,IBM Europe, Mainz,Germany)
Magneto-Optical Discs (K. Röll,Experimental Physics,Kassel,Germany)
Rewriteable DVD based on Phase Change Materials (M. Wuttig,Experimental Physics,Aachen,Germany)
Holographic 3D Memories (M. Imlau,Physics Department,Osnabrück,Germany; T. Bieringer,Bayer AG,Leverkusen,Germany; S. G. Odoulov,National Academy of Sciences,Kiev,Ukraina;Th. Woike,Institute of Mineralogy,Cologne,Germany)
AFM-based Mass Storage Concepts (P. Vettiger,M. Despont,U. Dürig,M. A. Lantz,H. E. Rothuizen,G. K. Binnig,IBM Research Laboratory,Rueschlikon,Switzerland)
DATA TRANSMISSION AND INTERFACES
Transmission on Chip and Board Level (M. Mokwa,IWE,Aachen,Germany)
Lightwave Systems (Ch. Buchal,IFF,Jülich,Germany)
Microwave Communication Systems (N. Klein,ISG,Jülich,Germany)
Neuroelectronic Interfacing (P. Fromherz,MPI Biochemistry,München,Germany)
SENSOR ARRAYS AND IMAGING SYSTEMS
Optical 3-D Time-of-Flight Imaging System (B. J. Hosticka,W. Brockherde,R. Jeremias,Institute of Microelectronic Circuits,Duisburg,Germany)
Pyroelectric Detector Arrays for IR Imaging (P. Muralt,EPFL,Lausanne,Switzerland;H. R. Beratan,Raytheon Systems,Texas,USA)
Electronic Noses (D. Kohl,Physics Department,Giessen,Germany)
Tactile Sensors (K. Machida,NTT Microsystem Integration Laboratories,Atsugi,Japan;J. Kent,Elo TouchSystems Inc., Fremont,California,USA)
DISPLAYS
Liquid Crystal Displays (S.-T. Wu, School of Optics,Orlando,USA;R. Zorn,IFF, Jülich,Germany)
Organic LED Displays (S. R. Forrest,Department of Electrical Engineering,Princeton,USA;M. Pfeiffer,IAPP,Dresden,Germany)
Plasma and Field-Emission Displays (P. Bachmann et al. Philips Research,Aachen,Germany)
Electronic Paper (S. Jungk,D. Theiss,Infineon,Munich,Germany)