Simulation of Semiconductor Processes and Devices 2004

Advanced Transport Models for Sub-Micrometer Devices.- NEMO-ID: the First NEGF-Based TCAD Tool.- The Density-Gradient Correction as a Disguised Pilot Wave of de Broglie.- Full Band and Approximated Solutions of the Schrödinger Equation in Silicon Inversion Layers.- A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices.- On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices.- Quantum Mechanical Simulation in DG MOSFETs Based on a Tight Binding Green's Function Formalism.- Modeling B Uphill Diffusion in the Presence of Ge.- Ab-initio Calculations To Predict Stress Effects on Boron Solubility in Silicon.- Boron Diffusion in Strained and Strain-Relaxed SiGe.- Modeling Dopant Diffusion in SiGe and SiGeC layers.- Continuum Modeling of Indium To Predict SSR Profiles.- Theoretical Analysis of Stress and Surface Orientation Effects on Inversion Carrier Mobility.- CMOS Circuit Performance Enhancement by Surface Orientation Optimization.- Modeling of Stress Induced Layout Effect on Electrical Characteristics of Advanced MOSFETs.- Hole Mobility Enhancement Modeling and Scaling Study for High Performance Strained Ge Buried Channel PMOSFETs.- Three-Dimensional Characterization and Modelling of Stress Distribution in High-Density DRAM Memory Cells.- Strain Optimization To Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics by Use of First-Principles Calculations.- Simulation Study of Simple CMOS-Compatible Thin-SOI Vertical Bipolar Transistors on Thin BOX with an Inversion Collector.- Current Collapse Associated with Surface States in GaN-Based HEMT's. Theoretical/Experimental Investigations.- Implications of Gate Misalignment for Ultra-Narrow Multi-Gate Devices.- Source-Side InjectionModeling by Means of the Spherical-Harmonics Expansion of the BTE.- Investigation of a Novel Tunneling Transistor by MEDICI Simulation.- Optimization of BAW Resonator Performance Using Combined Simulation Techniques.- Simulation of GaN-Based Light-Emitting Devices.- On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models.- A Local Mobility Model for Ultra-Thin DGSOI nMOSFETs.- On the Relationship between Carrier Mobility and Velocity in Sub-50 nm MOSFETs via Calibrated Monte Carlo Simulation.- A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors.- 3D Simulation of Process Effects Limiting FinFET Performance and Scalability.- Full Three-Dimensional Analysis of a Non-Volatile Memory Cell.- Three-Dimensional Simulation of Orientation-Dependent Wet Chemical Etching.- Modeling CVD effects in Atomic Layer Deposition on the Feature Scale.- Defect and Carrier Dynamics in Nanotubes under Electronic Excitations: Time-Dependent Density Functional Approaches.- Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors.- Numerical Performance Analysis of Carbon Nanotube (CNT) Embedded MOSFETs.- Parameter Extraction and Validation of an Electronic and Optical Model for Organic Light-Emitting Devices.- Adaptive Surface Triangulations for 3D Process Simulation.- Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation.- Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys.- Comprehensive Understanding of Carrier Mobility in MOSFETs with Oxynitrides and Ultrathin Gate Oxides.- Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes.- Very High Performance, Sub-20 nm, Strained Si and SixGe1_x, Hetero-Structure, Center Channel (CC) NMOS and PMOS DGFETs.- Scalability of FinFETs and Unstrained-Si/Strained-Si FDSOI-MOSFETs.- Device Performance in Conventional and Strained Si n-MOSFETs with High-K Gate Stacks.- Understanding the Role of Strain in Si-Ge Devices.- Electro-Thermal Simulations of Strained-Si MOSFETs under ESD Conditions.- Simulation of the Cross-Coupling among Snap Back Devices under Transient High Current Stress.- Simulation of the Failure Mechanism of Power DMOS Transistors under Avalanche Stress.- An Accurate and Comprehensive Soft Error Simulator NISES II.- Impact of Scattering on Random Dopant Induced Current Fluctuations in Decanano MOSFETs.- Analysis of Random Doping and Oxide Thickness Induced Fluctuations in Nanoscale Semiconductor Devices through Poisson-Schrödinger Computations.- Stable Simulation of Impurity Fluctuation for Contact Resistance and Schottky Diodes.- Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation.- Examination of Spatial Frequency Dependence of Line Edge Roughness on MOS Device Characteristics.- Simulation of Lithography-Caused Gate Length and Interconnect Linewidth Variational Impact on Circuit Performance in Nanoscale Semiconductor Manufacturing.- Optimization of Recessed and Elevated Suicide Source/Drain Contact Structure Using Physical Compact Resistance Modeling and Simulation in Ultra-Thin Body SOI MOSFETs.- A New Backscattering Model for Nano-MOSFET Compact Modeling.- Fully-Depleted SOI-MOSFET Model for Circuit Simulation and Its Application to 1/f Noise Analysis.- Modeling of Carrier Transport Dynamics at GHz-Frequencies for RF Circuit-Simulation.- SPICE-Compatible Macro Model for Split-Gate Compact NVM Cell with Various Gap Sizes.- SET Accurate Compact Model for SET-MOSFETHybrid Circuit Simulation.- 2D Quantum Mechanical (QM) Charge Model and Its Application to Ballistic Transport of Sub-50 nm Bulk Silicon MOSFETs.- Effective Bohm Quantum Potential for Device Simulators Based on Drift-Diffusion and Energy Transport.- Single Ion and Multi Ion MOSFETs Simulation with Density Gradient Model.- Modeling and Simulation of Combined Thermionic Emission-Tunneling Current through Interfacial Isolation Layer.- Experiments on Minority Carrier Diffusion in Silicon: Contribution of Excitons.- Accurate Temperature Drift Model of MOSFETs Mobility for Analog Circuits.- Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in ?-SiC Devices.- Strain Scaling for Ultra Thin Silicon NMOS Devices.- CMOS Scaling Analysis Based on ITRS Roadmap by Three-dimensional Mixed-Mode Device Simulation.- Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors.- Numerical Analysis for the Structure Dependence on the Subthreshold Slope of Floating Channel Type SGT(FC-SGT) Flash Memory.- A Monte-Carlo Method for Distribution of Standby Currents and Its Application to DRAM Retention Time.- Optimal Contact Placement in Partially Depleted SOI with Application to Raised Source-Drain Structures.- Simulation of Microstructure Formation during Thin Film Deposition.- Effect of Stress on Pattern-Dependent Oxidation of Silicon Nanostructures.- The Evolution of the Resistance and Current Density during Electromigration.- 3-D Physically-Based Electromigration Simulation in Copper-Low-K Interconnect.- 3D Feature-Scale Simulation of Sputter Etching with Coupling to Equipment Simulation.- Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information.- Genetic Algorithm for Optimization and Calibration inProcess Simulation.- Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation.- An Analysis of the Effect of Surrounding Gate Structure on Soft Error Immunity.- Analytical Modeling of Ge and Si Double-Gated (DG) NFETs and the Effect of Process Induced Variations (PIV) on Device Performance.- Proposal of Physics-Based Compact Model for Nanoscale MOSFETs Including the Transition from Drift-Diffusion to Ballistic Transport.- A New Methodology for Efficient and Reliable Large-Signal Analysis of RF Power Devices.- Small-Signal Modeling of RFCMOS.