Thyristor Design and Realization
Paul D. Taylor(Author)
Wiley (Publisher)
Published on 11. May 1992
Book
Hardback
238 pages
978-0-471-93572-8 (ISBN)
Description
Invented in the late 1950s, the power thyristor is a semiconductor device which has shown a remarkable ability to accept the challenge of technological advancement. Since it conception as a switching device with the then high power ratings of a few hundred watts, modern thyristors have been developed capable of megawatts of switching power. Furthermore, novel design concepts and improvements in semiconductor silicon processing techniques have led to special thyristor designs such as the gate turn-OFF thyristors, light triggered thyristors and more recently the field controlled thyristors or static induction thyristor. The design of both the basic thyristor and these several special types of thyristor is the subject of this book, which covers design from the selection of the starting silicon through to the design of the device encapsulation. In the first chapter the power thyristor is introduced to the reader unfamiliar with the subject, while in the second chapter the various operating modes of the device are discussed in terms of the detailed device physics.
These two initial chapters provide the basis for an understanding of thyristor design starting from the assumption of a degree level knowledge of semiconductor physics. Chapter 3 concerns the detailed design of the basic thyristor, leading the reader through the design stages of semiconductor selection, minority carrier lifetime, vertical strucxture design, cathode emitter shorts and the detailed thyristor gate design. The following chapter expands on the design discussions of Chapter 3 by considering the special requirements of advanced thyristor types including the gate assisted turn-OFF, the asymmetric, the gate turn-OFF, the reverse conducting and the light activated thristors. Also included are sections on field controlled thyristors, triacs and the new MOS-thyristor hybrid structures. In any design procedure for a power thyristor it is not possible to separate the structural design from the fabrication process design. In Chapter 5 the techniques used in thyristor fabrication are reviewed, covering such topics as diffusion, lifetime control, metallization and junction passivation.
The concluding Chapter 6 briefly examines the thermal and mechanical design of the thyristor, dealing with such topics as the encapsulating design and cooling techniques.
These two initial chapters provide the basis for an understanding of thyristor design starting from the assumption of a degree level knowledge of semiconductor physics. Chapter 3 concerns the detailed design of the basic thyristor, leading the reader through the design stages of semiconductor selection, minority carrier lifetime, vertical strucxture design, cathode emitter shorts and the detailed thyristor gate design. The following chapter expands on the design discussions of Chapter 3 by considering the special requirements of advanced thyristor types including the gate assisted turn-OFF, the asymmetric, the gate turn-OFF, the reverse conducting and the light activated thristors. Also included are sections on field controlled thyristors, triacs and the new MOS-thyristor hybrid structures. In any design procedure for a power thyristor it is not possible to separate the structural design from the fabrication process design. In Chapter 5 the techniques used in thyristor fabrication are reviewed, covering such topics as diffusion, lifetime control, metallization and junction passivation.
The concluding Chapter 6 briefly examines the thermal and mechanical design of the thyristor, dealing with such topics as the encapsulating design and cooling techniques.
More details
Series
Edition
New edition
Language
English
Place of publication
Chichester
United Kingdom
Publishing group
John Wiley and Sons Ltd
Target group
College/higher education
Professional and scholarly
Edition type
New edition
Illustrations
index
Dimensions
Height: 224 mm
Width: 148 mm
Weight
340 gr
ISBN-13
978-0-471-93572-8 (9780471935728)
Copyright in bibliographic data is held by Nielsen Book Services Limited or its licensors: all rights reserved.
Schweitzer Classification
Content
Part 1 Thyristor basics: introduction; thyristor characteristics; thyristor construction; thyristor types and applications; thyristor selection. Appendix. Part 2 Physics of operation: inntroduction; thyristor OFF-state; turn-ON characteristics; ON-state; turn-OFF. Part 3 Thyristor design: semiconductor selection; minority carrier lifetime; vertical structure design; emitter shorts; gate design. Part 4 Special thyristor types: the gate assisted turn-OFF thyristor (GATT); the asymmetric thyristor (ASCR); the gate turn-OFF (GTO) thyristor; the reverse conducting thyristor (RCT); light-activated thyristors; the field controlled thyristor (FCT); the triac; triac triggering modes; practical constructions and commutating dV/dt effects; ungated pnpn switches; MOSFET-thyristor hybrids. Part 5 Power thyristor fabrication; preparation of the starting silicon; epitaxy; PN junction fabrication; oxidations; photolithography; lifetime control; power thyristor contacts; junction passivation. Part 6 Thermal and mechanical design: thermal properties; power thyristor package designs; thyristor cooling techniques.