Advanced Ultra Low-Power Semiconductor Devices
Design and Applications
1st Edition
Published on 7. November 2023
Book
Hardback
320 pages
978-1-394-16641-1 (ISBN)
Description
ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors.
This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field.
Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications.
Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book's scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry's future.
This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field.
Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications.
Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book's scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry's future.
More details
Language
English
Place of publication
United States
Publishing group
John Wiley & Sons Inc
Target group
Professional and scholarly
Product notice
sewn/stitched
Cloth over boards
Dimensions
Height: 233 mm
Width: 159 mm
Thickness: 23 mm
Weight
590 gr
ISBN-13
978-1-394-16641-1 (9781394166411)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Shubham Tayal | Abhishek Kumar Upadhyay | Shiromani Balmukund Rahi
Advanced Ultra Low-Power Semiconductor Devices
Design and Applications
E-Book
10/2023
1st Edition
Wiley
€177.99
Available for download
Shubham Tayal | Abhishek Kumar Upadhyay | Shiromani Balmukund Rahi
Advanced Ultra Low-Power Semiconductor Devices
Design and Applications
E-Book
10/2023
1st Edition
Wiley
€177.99
Available for download
Persons
Shubham Tayal, PhD, is an assistant professor in the Department of Electronics and Communication Engineering at SR University, Warangal, India. He has more than six years of academic and research experience and has published more than 30 research papers in various scholarly journals and conferences. He is on the editorial and reviewer panel of many journals and conferences, as well. He is the editor or coeditor of seven books and was a recipient of the Green ThinkerZ International Distinguished Young Researcher Award in 2020.
Abhishek Kumar Upadhyay, PhD, is a research and development engineer at X-FAB GmbH Dresden, Germany. After obtaining his PhD in electrical engineering from the Indian Institute of Technology in 2019, he worked for one year as a postdoctoral fellow in the Model Group, Material to System Integration Laboratory, University of Bordeaux, France, and has worked in the industry since. He has authored several research articles.
Shiromani Balmukund Rahi, PhD, is a faculty member at the Mahamaya College of Agriculture Engineering and Technology, Akabarpur, Uttar Pradesh, India and an associated senior research scholar of Department of Electrical Engineering(Semiconductor Device, modeling division), Indian Institute of Technology Kanpur. He has more than six years of academic and research experience and has published 25 journal articles, two proceedings, and 18 book chapters, and he has edited seven books for international publications.
Young Suh Song is an assistant professor in the Department of Computer Science at the Korea Military Academy. He has authored or co-authored over 40 research papers in journals and conferences, and he has served as a technical committee member and guest speaker at various universities and conferences.
Abhishek Kumar Upadhyay, PhD, is a research and development engineer at X-FAB GmbH Dresden, Germany. After obtaining his PhD in electrical engineering from the Indian Institute of Technology in 2019, he worked for one year as a postdoctoral fellow in the Model Group, Material to System Integration Laboratory, University of Bordeaux, France, and has worked in the industry since. He has authored several research articles.
Shiromani Balmukund Rahi, PhD, is a faculty member at the Mahamaya College of Agriculture Engineering and Technology, Akabarpur, Uttar Pradesh, India and an associated senior research scholar of Department of Electrical Engineering(Semiconductor Device, modeling division), Indian Institute of Technology Kanpur. He has more than six years of academic and research experience and has published 25 journal articles, two proceedings, and 18 book chapters, and he has edited seven books for international publications.
Young Suh Song is an assistant professor in the Department of Computer Science at the Korea Military Academy. He has authored or co-authored over 40 research papers in journals and conferences, and he has served as a technical committee member and guest speaker at various universities and conferences.
Content
Preface xi
1 Subthreshold Transistors: Concept and Technology 1
Ball Mukund Mani Tripathi
1.1 Introduction 2
1.2 Major Sources of Leakage and Possible Methods of Prevention 2
1.3 Possibilities and Challenges 12
1.4 Conclusions 21
2 Introduction to Conventional MOSFET and Advanced Transistor TFET 29
M. Saravanan, K. Ramkumar, Eswaran Parthasarathy, J. Ajayan and S. Sreejith
2.1 Introduction 30
2.2 Device Structure 30
2.3 TFET Principle of Operation 31
2.4 Material Characterization 33
2.5 Characteristics of TFET 35
2.6 Comparison of OFF-State Characteristics 37
2.7 Phonon Scattering's Impact 39
2.8 ON-State Performance Comparison 40
2.9 Performance Analysis Based on Intrinsic Delay 40
2.10 Bandgap's Effect on Device Performance 41
2.11 MOSFET and TFET Scaling Behaviour 43
2.12 Surface Potential of an N-TFET and N-MOSFET 45
2.13 Professional Advantages of TFET over MOSFET 46
2.14 Conclusion 46
3 Operation Principle and Fabrication of TFET 51
Mekonnen Getnet Yirak and Rishu Chaujar
3.1 Introduction 52
3.2 Planar MOSFET's Limitations 54
3.3 Demand for Low Power Operation 55
3.4 TFET: Operation Principle of TFET 56
3.5 TFET: Recent Design Issues in TFET 63
3.6 TFET: Modeling and Application 65
3.7 TFET: Fabrication Perspective 68
3.8 TFET: Applications and Future of Low-Power Electronics 70
3.9 Expected Challenges in Replacing MOSFET with TFET 70
3.10 Conclusion 71
4 Mathematical Modeling of TFET and Its Future Applications: Ultra Low-Power SRAM Circuit and III-IV TFET 77
Nayana G H and P. Vimala
4.1 Introduction 78
4.2 Modeling Approaches 78
4.3 Structure 81
4.4 Applications of Tunnel Field-Effect Transistor 83
4.5 Road Ahead for Tunnel Field Effect Transistors 87
5 Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET 91
Prabhat Singh and Dharmendra Singh Yadav
5.1 Introduction 92
5.2 Simulated Device Structure and Parameters 93
5.3 DC Characteristics 93
5.4 Analysis of Analog/RF FOMs 98
5.5 Conclusion 101
6 Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure 105
Susmitha Kothapalli, Zohmingliana and Brinda Bhowmick
6.1 Introduction 106
6.2 Study of Different TFET Structures 106
6.3 Proposed Structure 109
6.4 Results and Discussion 110
6.5 Conclusion 127
6.6 Future Scope 128
7 State of the Art Tunnel FETs for Low Power Memory Applications 131
Arun A. V., Sreelekshmi P. S. and Jobymol Jacob
7.1 Static Random Access Memory 131
7.2 Performance Parameters of SRAM Cell 134
7.3 TFET-Based SRAM Cell Design 135
7.4 Conclusion 159
8 Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight 165
Abhishek Acharya, Sourabh Panwar, Shobhit Srivastava and Shashidhara M.
8.1 Fundamental Limitation of CMOS: Tunnel FETs 165
8.2 Working Principle of Tunnel FET 168
8.3 Point and Line TFETs: Tunneling Direction 169
8.4 Perspective of Line TFETs 170
8.5 Analytical Models of Line TFETs 176
8.6 Line TFETs for Analog & Digital Circuits Design 178
8.7 Other Steep Slope Devices 179
8.8 Conclusion 181
9 Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors 187
Sresta Valasa, Shubham Tayal and Laxman Raju Thoutam
9.1 Introduction 188
9.2 Device Simulation Details 190
9.3 Results and Discussion 192
9.4 Conclusion 201
10 Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application 207
Shelja Kaushal
10.1 Introduction 208
10.2 NCFET and Its Design Constraints 209
10.3 NCFET for Low-Power Applications 216
10.4 Summary 226
11 Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses 235
Sourav De, Maximilian Lederer, Yannick Raffel, David Lehninger, Sunanda Thunder, Michael P.M. Jank, Tarek Ali and Thomas Kaempfe
11.1 Introduction 236
11.2 Ferroelectricity in Hafnium Oxide 241x Contents
11.3 IGZO Based Ferroelectric Thin Film Transistor 245
11.4 Applications in Neural Networks 249
11.5 Conclusion 250
12 Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges 261
Y. Alekhya, Umakanta Nanda and Chandan Kumar Pandey
12.1 Introduction 261
12.2 Literature Survey 263
12.3 Impact of Radiation Effects on Sram Cells 266
12.4 Results and Discussion 267
12.5 Conclusion 274
13 Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors 279
Young Suh Song, Shiromani Balmukund Rahi, Shahnaz Kossar, Abhishek Kumar Upadhyay, Shubham Tayal, Chandan Kumar Pandey and Biswajit Jena
13.1 Introduction 280
13.2 Challenges in Future Ultra-Low Power Semiconductors 282
13.3 Conclusion 286
References 288
Index 293
1 Subthreshold Transistors: Concept and Technology 1
Ball Mukund Mani Tripathi
1.1 Introduction 2
1.2 Major Sources of Leakage and Possible Methods of Prevention 2
1.3 Possibilities and Challenges 12
1.4 Conclusions 21
2 Introduction to Conventional MOSFET and Advanced Transistor TFET 29
M. Saravanan, K. Ramkumar, Eswaran Parthasarathy, J. Ajayan and S. Sreejith
2.1 Introduction 30
2.2 Device Structure 30
2.3 TFET Principle of Operation 31
2.4 Material Characterization 33
2.5 Characteristics of TFET 35
2.6 Comparison of OFF-State Characteristics 37
2.7 Phonon Scattering's Impact 39
2.8 ON-State Performance Comparison 40
2.9 Performance Analysis Based on Intrinsic Delay 40
2.10 Bandgap's Effect on Device Performance 41
2.11 MOSFET and TFET Scaling Behaviour 43
2.12 Surface Potential of an N-TFET and N-MOSFET 45
2.13 Professional Advantages of TFET over MOSFET 46
2.14 Conclusion 46
3 Operation Principle and Fabrication of TFET 51
Mekonnen Getnet Yirak and Rishu Chaujar
3.1 Introduction 52
3.2 Planar MOSFET's Limitations 54
3.3 Demand for Low Power Operation 55
3.4 TFET: Operation Principle of TFET 56
3.5 TFET: Recent Design Issues in TFET 63
3.6 TFET: Modeling and Application 65
3.7 TFET: Fabrication Perspective 68
3.8 TFET: Applications and Future of Low-Power Electronics 70
3.9 Expected Challenges in Replacing MOSFET with TFET 70
3.10 Conclusion 71
4 Mathematical Modeling of TFET and Its Future Applications: Ultra Low-Power SRAM Circuit and III-IV TFET 77
Nayana G H and P. Vimala
4.1 Introduction 78
4.2 Modeling Approaches 78
4.3 Structure 81
4.4 Applications of Tunnel Field-Effect Transistor 83
4.5 Road Ahead for Tunnel Field Effect Transistors 87
5 Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET 91
Prabhat Singh and Dharmendra Singh Yadav
5.1 Introduction 92
5.2 Simulated Device Structure and Parameters 93
5.3 DC Characteristics 93
5.4 Analysis of Analog/RF FOMs 98
5.5 Conclusion 101
6 Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure 105
Susmitha Kothapalli, Zohmingliana and Brinda Bhowmick
6.1 Introduction 106
6.2 Study of Different TFET Structures 106
6.3 Proposed Structure 109
6.4 Results and Discussion 110
6.5 Conclusion 127
6.6 Future Scope 128
7 State of the Art Tunnel FETs for Low Power Memory Applications 131
Arun A. V., Sreelekshmi P. S. and Jobymol Jacob
7.1 Static Random Access Memory 131
7.2 Performance Parameters of SRAM Cell 134
7.3 TFET-Based SRAM Cell Design 135
7.4 Conclusion 159
8 Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight 165
Abhishek Acharya, Sourabh Panwar, Shobhit Srivastava and Shashidhara M.
8.1 Fundamental Limitation of CMOS: Tunnel FETs 165
8.2 Working Principle of Tunnel FET 168
8.3 Point and Line TFETs: Tunneling Direction 169
8.4 Perspective of Line TFETs 170
8.5 Analytical Models of Line TFETs 176
8.6 Line TFETs for Analog & Digital Circuits Design 178
8.7 Other Steep Slope Devices 179
8.8 Conclusion 181
9 Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors 187
Sresta Valasa, Shubham Tayal and Laxman Raju Thoutam
9.1 Introduction 188
9.2 Device Simulation Details 190
9.3 Results and Discussion 192
9.4 Conclusion 201
10 Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application 207
Shelja Kaushal
10.1 Introduction 208
10.2 NCFET and Its Design Constraints 209
10.3 NCFET for Low-Power Applications 216
10.4 Summary 226
11 Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses 235
Sourav De, Maximilian Lederer, Yannick Raffel, David Lehninger, Sunanda Thunder, Michael P.M. Jank, Tarek Ali and Thomas Kaempfe
11.1 Introduction 236
11.2 Ferroelectricity in Hafnium Oxide 241x Contents
11.3 IGZO Based Ferroelectric Thin Film Transistor 245
11.4 Applications in Neural Networks 249
11.5 Conclusion 250
12 Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges 261
Y. Alekhya, Umakanta Nanda and Chandan Kumar Pandey
12.1 Introduction 261
12.2 Literature Survey 263
12.3 Impact of Radiation Effects on Sram Cells 266
12.4 Results and Discussion 267
12.5 Conclusion 274
13 Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors 279
Young Suh Song, Shiromani Balmukund Rahi, Shahnaz Kossar, Abhishek Kumar Upadhyay, Shubham Tayal, Chandan Kumar Pandey and Biswajit Jena
13.1 Introduction 280
13.2 Challenges in Future Ultra-Low Power Semiconductors 282
13.3 Conclusion 286
References 288
Index 293