
Hot-Carrier Effects in MOS Devices
Academic Press
Published on 28. November 1995
Book
Hardback
312 pages
978-0-12-682240-3 (ISBN)
Description
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.
This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.
This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.
More details
Language
English
Place of publication
San Diego
United States
Publishing group
Elsevier Science Publishing Co Inc
Target group
Professional and scholarly
The primary audience for this book includes silicon process, device, and design engineers (especially those in R&D), and scientists, as well as graduate students and researchers in silicon device technology, solid state science, electrical and electronic engineering, materials science, engineering, physics, and chemistry.This book is also suitable as a supplementary text for a graduate or short course on advanced MOS devices, device reliability, hot-carrier effects in MOS devices, VLSI device physics, or advanced CMOS design. It is useful for students working on device reliability research.
Product notice
Laminated cover
Dimensions
Height: 229 mm
Width: 152 mm
Thickness: 19 mm
Weight
649 gr
ISBN-13
978-0-12-682240-3 (9780126822403)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions

Eiji Takeda | Cary Y. Yang | Akemi Miura-Hamada
Hot-Carrier Effects in MOS Devices
E-Book
11/1995
Academic Press
€54.95
Available for download
Persons
Content
MOS Device Fundamentals
Hot-Carrier Injection Mechanisms
Hot-Carrier Device Degradation
AC and Process-Induced Hot-Carrier Effects
Hot-Carrier Effects at Low Temperature and Low Voltage
Dependence of Hot-Carrier Phenomena on Device Structure
As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices
Gate-to-Drain Overlatpped Devices (GOLD)
Hot-Carrier Injection Mechanisms
Hot-Carrier Device Degradation
AC and Process-Induced Hot-Carrier Effects
Hot-Carrier Effects at Low Temperature and Low Voltage
Dependence of Hot-Carrier Phenomena on Device Structure
As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices
Gate-to-Drain Overlatpped Devices (GOLD)