Semiconductor Devices
Physics and Technology
2nd Edition
Published on 25. September 2001
Book
Hardback
X, 566 pages
978-0-471-33372-2 (ISBN)
Description
This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
More details
Edition
2., Auflage
Language
English
Place of publication
New York
United States
Publishing group
John Wiley and Sons Ltd
Target group
Professional and scholarly
Edition type
Revised edition
Illustrations
index
Dimensions
Height: 26.2 cm
Width: 17.6 cm
Thickness: 27 mm
Weight
1270 gr
ISBN-13
978-0-471-33372-2 (9780471333722)
Schweitzer Classification
Other editions
Previous edition
Book
05/1985
Wiley
€55.00
Article exhausted; check for reprint
Person
S. M. Sze is UMC Chair Professor of the National Chiao Tung University and President of the National Nano Device Laboratories, Taiwan, R.O.C. For many years he was a member of the technical staff at Bell Laboratories. Professor Sze is the co-inventor of the nonvolatile semiconductor memory. He has written numerous texts on device physics, including PHYSICS OF SEMICONDUCTOR DEVICES, considered a reference classic. In 1991, he received the IEEE J. J. Ebers award for his "fundamental and pioneering contributions..." He received his PhD in solid-state electronic from Stanford University in 1963.
Content
Preface.
Introduction.
PART I: SEMICONDUCTOR PHYSICS.
Energy Bands and Carrier Concentration in Thermal Equilibrium.
Carrier Transport Phenomena.
PART II: SEMICONDUCTOR DEVICES.
p-n Junction.
Bipolar Transistor and Related Devices.
MOSFET and Related Devices.
MESFET and Related Devices.
Microwave Diodes, Quantum-Effect, and Hot-Electron Devices.
Photonic Devices.
PART III: SEMICONDUCTOR TECHNOLOGY.
Crystal Growth and Epitaxy.
Film Formation.
Lithography and Etching.
Impurity Doping.
Integrated Devices.
Appendix A: List of Symbols.
Appendix B: International Systems of Units (SI Units).
Appendix C: Unit Prefixes.
Appendix D: Greek Alphabet.
Appendix E: Physical Constants.
Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K.
Appendix G: Properties of Si and GaAs at 300 K.
Appendix H: Derivation of the Density of States in Semiconductor.
Appendix I: Derivation of Recombination Rate for Indirect Recombination.
Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode.
Appendix K: Basic Kinetic Theory of Gases.
Appendix L: Answers to Selected Problems.
Index.
Introduction.
PART I: SEMICONDUCTOR PHYSICS.
Energy Bands and Carrier Concentration in Thermal Equilibrium.
Carrier Transport Phenomena.
PART II: SEMICONDUCTOR DEVICES.
p-n Junction.
Bipolar Transistor and Related Devices.
MOSFET and Related Devices.
MESFET and Related Devices.
Microwave Diodes, Quantum-Effect, and Hot-Electron Devices.
Photonic Devices.
PART III: SEMICONDUCTOR TECHNOLOGY.
Crystal Growth and Epitaxy.
Film Formation.
Lithography and Etching.
Impurity Doping.
Integrated Devices.
Appendix A: List of Symbols.
Appendix B: International Systems of Units (SI Units).
Appendix C: Unit Prefixes.
Appendix D: Greek Alphabet.
Appendix E: Physical Constants.
Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K.
Appendix G: Properties of Si and GaAs at 300 K.
Appendix H: Derivation of the Density of States in Semiconductor.
Appendix I: Derivation of Recombination Rate for Indirect Recombination.
Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode.
Appendix K: Basic Kinetic Theory of Gases.
Appendix L: Answers to Selected Problems.
Index.