
Semiconductor Devices
J. J. Sparkes(Author)
Nelson Thornes Ltd (Publisher)
2nd Edition
Published in July 1994
Book
Paperback/Softback
IX, 224 pages
978-0-412-58770-2 (ISBN)
Description
This book presents semiconductor devices in a clear and concise manlier, dealing with the material encountered in the first and second years of an undergraduate or Higher National Diploma programme in electronics, electrical engineering or physics. It provides an ideal introduction firstly to the fundamental theoretical principles underlying the operation of semiconductor devices and, secondly, to their simple and effective mathematical modelling. There are also extensive references to circuit simulation software. In this enlarged second edition, the opportunity has been taken to show how the concept of electron energy bands can be used to introduce the physical processes in semiconductor devices. Explanations are given of a wider range of device characteristics in circuit applications and how these characteristics can be modelled by equivalent circuits. As well as a full update of the original text, the new edition contains: new material on the band model of an junction; new material on the band gap diode; and expanded treatment of JFETs to complement the existing material on MOSFETs.
More details
Series
Edition
2., nd ed. 1994
Language
English
Place of publication
Oxford
United Kingdom
Publishing group
Oxford University Press
Target group
Professional and scholarly
Research
Edition type
Revised edition
Illustrations
83
83 s/w Abbildungen
83 black & white illustrations, biography
Dimensions
Height: 25.4 cm
Width: 17.8 cm
Thickness: 14 mm
Weight
456 gr
ISBN-13
978-0-412-58770-2 (9780412587702)
DOI
10.1007/978-1-4899-7128-9
Schweitzer Classification
Content
Part 1 Semiconductors and applications of semiconductor devices: semiconductor materials - pure semiconductors, doped semiconductors, recombination; typical applications of semiconductor devices - semiconductor diodes, field effect transistors (FETS), bipolar junction transistors (BJTS), thyristors. Part 2 PN junction diodes: the silicon pnjunction; current flow in semiconductors; the pn junction in equilibrium; current through a pn junction; transition region width and capacitance; breakdown diodes; recombination and generation in pn junctions; solar cells and photodiodes; charge storage and diffusion capacitance; small signal equivalent circuit of a diode; SPICE. Part 3 Field effect transistors: the junction field effect transistor (JFET); metal-oxide-silicon field effect transistors (MOSFETS); characteristic equation of a MOSFET; the formation of the channel and the threshold voltage; the small signal equivalent circuit. Part 4 Bipolar junction transistors: the principles of the operation of the bipolar transistor; the hybrid - small-signal equivalent circuit; practical design considerations; the dependence of fr, and B on the d.c. collector current; the bipolar transistor as a switch; thyristors. Part 5 Integrated circuits: introduction; silicon integrated circuits based on bipolar npn transistors; the processing steps; pnp transistors; diodes; resistors; capacitors; Schottky diodes; MOSFETs in silicon integrated circuits; charge-coupled devices. Part 6 New technologies: introduction; III-V compounds; the gallium arsenide MESFET; ternary and quaternary compound semiconductors; light-emitting diodes; heterojunction LEDs; semiconductor lasers; heterojunction bipolar transistors.