Physics of Semiconductor Devices
Published on 1. February 1991
Book
Hardback
712 pages
978-0-13-666496-3 (ISBN)
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Article is exhausted; no reprint
Description
This volume provides a practical introduction to the basics of semiconductor physics as well as insights into important developments, such as amorphous silicon, compound semiconductor technologies, and novel heterostructure transistors.
More details
Language
English
Place of publication
United States
Publishing group
Pearson Education (US)
Target group
College/higher education
Dimensions
Height: 185 mm
Width: 243 mm
Thickness: 37 mm
Weight
962 gr
ISBN-13
978-0-13-666496-3 (9780136664963)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Content
1. Basic Semiconductor Physics.
2. p-n Junctions, Schottky Barrier Junctions, Heterojunctions and Ohmic Contacts.
3. Bipolar Junction Transistors.
4. Field Effect Transistors.
5. Photonic Devices.
6. Transferred-Electron Devices and Avalanche Diodes.
7. Novel Devices.
APPENDICES:
Physical Constants.
Greek Alphabet.
Units.
Magnitude Prefixes.
Unit Conversion Factors.
Properties of Silicon.
Properties of Germanium.
Properties of Gallium Arsenide.
Properties of Aluminum Gallium Arsendie.
Properties of InP.
Properties of InAs and In GaAs.
Properties of HgCdTe.
Properties of Diamond.
Properties of SiC.
Properties of ZnSe.
Properties of ZnTe.
Properties of Amorphous Silicon.
Properties of SiO2.
Properties of Si3N4.
Hyperbolic Functions.
Fermi Integrals.
Overlap Factor and Scattering Rates.
Momentum Relaxation Times and Low-Field Mobilities.
Device and Circuit Simulation Programs.
Relationship between h-parameters and Parameters of T-equivalent Circuit and ...P Equivalent Circuit.
Data Sheets for Motorola 2N2219A General Purpose Silicon n-p-n Transistors.
Periodic Table.
2. p-n Junctions, Schottky Barrier Junctions, Heterojunctions and Ohmic Contacts.
3. Bipolar Junction Transistors.
4. Field Effect Transistors.
5. Photonic Devices.
6. Transferred-Electron Devices and Avalanche Diodes.
7. Novel Devices.
APPENDICES:
Physical Constants.
Greek Alphabet.
Units.
Magnitude Prefixes.
Unit Conversion Factors.
Properties of Silicon.
Properties of Germanium.
Properties of Gallium Arsenide.
Properties of Aluminum Gallium Arsendie.
Properties of InP.
Properties of InAs and In GaAs.
Properties of HgCdTe.
Properties of Diamond.
Properties of SiC.
Properties of ZnSe.
Properties of ZnTe.
Properties of Amorphous Silicon.
Properties of SiO2.
Properties of Si3N4.
Hyperbolic Functions.
Fermi Integrals.
Overlap Factor and Scattering Rates.
Momentum Relaxation Times and Low-Field Mobilities.
Device and Circuit Simulation Programs.
Relationship between h-parameters and Parameters of T-equivalent Circuit and ...P Equivalent Circuit.
Data Sheets for Motorola 2N2219A General Purpose Silicon n-p-n Transistors.
Periodic Table.