Spectroscopy of Nonequilibrium Electrons and Phonons
Elsevier (Publisher)
Published on 23. December 1992
Book
Hardback
512 pages
978-0-444-89637-7 (ISBN)
Article exhausted; check different version
Description
The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. The evolution of energy and space distribution of nonequilibrium electrons and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.
The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. The evolution of energy and space distribution of nonequilibrium electrons and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.
The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. The evolution of energy and space distribution of nonequilibrium electrons and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.
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Series
Language
English
Place of publication
Oxford
United Kingdom
Publishing group
Elsevier Science & Technology
Target group
College/higher education
Professional and scholarly
Illustrations
indices
Dimensions
Height: 230 mm
ISBN-13
978-0-444-89637-7 (9780444896377)
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C. V. Shank | B. P. Zakharchenya
Spectroscopy of Nonequilibrium Electrons and Phonons
E-Book
12/2012
Elsevier
€70.95
Available for download
Persons
Editor
A.F. Ioffe Physico-Technical Institute, St Petersburg, CIS
Content
Monte Carlo calculation of hot electrons and hot phonons, P. Lugli; ultrafast luminescence spectrosopy of semiconductors - carrier relaxation, transport and tunnelling, J. Shah; nonequilibrium phonons in semiconductors, J.A. Kash and J.C. Tsang; the highly nonequilibrium hot-hole distributions in germaniums, A.A. Andronov; femtosecond processes in semiconductors, C.V. Shank and Ph. Becker; nonequilibrium electron transport, A.F.J. Levi and S. Schmitt-Rink; hot-electron photoluminescence under continuous-wave pumping, D.N. Mirlin and V.I. Perel; fluctuation spectroscopy of hot electrons in semiconductors, V. Bareikis et al; photoelectronic processes in semiconductors activated to negative electron affinity, C. Hermann et al.