Nanometer CMOS
World Scientific Publishing Co Pte Ltd
Published on 28. April 2008
Book
Hardback
300 pages
978-981-270-709-3 (ISBN)
Description
This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented. An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.
More details
Language
English
Place of publication
Singapore
Singapore
Target group
College/higher education
Professional and scholarly
ISBN-13
978-981-270-709-3 (9789812707093)
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Schweitzer Classification
Content
Evolution and Recent Advances in Si Electronics; MOSFET Fundamentals, Theory, and Modeling; Nanometer MOSFETs; RF MOSFETs; Overview of Nanometer CMOS Technology; Challenges of Giga-Scale Integration.