
Compact Hierarchical Bipolar Transistor Modeling With Hicum
World Scientific Publishing Co Pte Ltd
Published on 26. November 2010
Book
Hardback
752 pages
978-981-4273-21-3 (ISBN)
Description
Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
More details
Series
Language
English
Place of publication
Singapore
Singapore
Target group
College/higher education
Professional and scholarly
Dimensions
Height: 235 mm
Width: 157 mm
Thickness: 45 mm
Weight
1223 gr
ISBN-13
978-981-4273-21-3 (9789814273213)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Persons
Author
Univ Of Technology Dresden, Germany & Univ Of California San Diego, Ca, Usa
Indian Inst Of Technology Madras, India
Content
Device Modeling Overview; Theory of Homojunction Bipolar Transistors; Advanced Theory; Geometry (Layout) Scaling; Temperature Effects; Compact Noise Modeling; HICUM Level2; Parameter Determination for HICUM/L2; Model Hierarchy; Application Examples.