Materials Science and Technology
A Comprehensive Treatment / Electronic Structure and Properties of Semiconductors
1st Edition
Published on 1. November 1991
Book
Hardback
XIII, 603 pages
978-3-527-26817-7 (ISBN)
Description
This volume covers the structure and properties of semiconductors, with particular emphasis on concepts relevant to semiconductor technology. It will be of interest to physicists and engineers in research and in the electronics industry as a valuable referennce source and state-of-the-art review by the world's top authors.
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More details
Series
Edition
1., Aufl.
Language
English
Place of publication
Weinheim
Germany
Target group
College/higher education
Professional and scholarly
Illustrations
29
320 s/w Abbildungen, 29 s/w Tabellen
320 b&w figures, 29 tables
Dimensions
Height: 24 cm
Width: 17 cm
Weight
1265 gr
ISBN-13
978-3-527-26817-7 (9783527268177)
Schweitzer Classification
Content
Band theory applied to semiconductors, M. Lannoo; optical properties and charge transport, R.G. Ulbrich; intrinsic point defecta in semiconductors, G. Watkins; deep centers in semiconductors, H. Feichtinger; equilibria, nonequilibria, diffusion and precipitation, U.M. Gasele and T.Y. Tan; dislocations, H. Alexander and H. Teichler; grain boundaries in semiconductors, J.L. Rouviere et al; interfaces, A. Ourmazd et al; the hall effect in quantum wires, A.M. Chang; material properties of hydrogenated amorphous silicon, R.A. Street and K. Winer; high - temperature properties of 3d - transition elements in silicon, W. Schroter et al.