Physics And Modeling Of Tera- And Nano-devices
Will be published approx. on 6. May 2008
Book
Hardback
192 pages
978-981-277-904-5 (ISBN)
Description
Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book.
More details
Series
Language
English
Place of publication
Singapore
Singapore
Target group
College/higher education
Product notice
sewn/stitched
Cloth over boards
Dimensions
Height: 249 mm
Width: 170 mm
Thickness: 20 mm
Weight
567 gr
ISBN-13
978-981-277-904-5 (9789812779045)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Persons
Content
Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires; Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors; Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices; Nanoelectronic Device Simulation Based on the Wigner Function Formalism; Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on Nanohub.org; Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions; Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems; HEMT-Based Nanometer Devices Toward Terahertz Era; Plasma Waves in Two-Dimensional Electron Systems and Their Applications; Resonant Terahertz Detection Antenna Utilizing Plasma Oscillations in Lateral Schottky Diode; Terahertz Polarization Controller Based on Electronic Dispersion Control of 2D Plasmons; Higher-Order Plasmon Resonances in GaN-Based Field-Effect Transistor Arrays with Connected and Isolated Channels; Ultra-Highly Sensitive Terahertz Detection Using Carbon-Nanotube Quantum Dots; Generation of Ultrashort Electron Bunches in Nanostructures by Femtosecond Laser Pulses; Characterization of Voltage-Controlled Oscillator Using RTD Transmission Line; Infrared Quantum-Dot Detectors with Diffusion-Limited Capture; Magneto-Resistance in Fe/MgO/Fe Magentic Tunnel Junctions; Modeling and Implementation of Spin-Based Quantum Computation; Quantum Engineering for Threat Reduction and Homeland Security; Strong Phase Shift Mask Manufacturing Error Impact on the 65nm Poly Line Printability.