Nonlinear Transistor Model Parameter Extraction Techniques
Published on 13. October 2011
Book
Hardback
366 pages
978-0-521-76210-6 (ISBN)
Description
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Reviews / Votes
'Modeling is at the heart of any modern design process and improvements in transistor modeling have made a significant, but often unrecognized, contribution to the wireless revolution impacting our daily lives. The authors and contributors have collaborated across academic and company boundaries to bring together the latest techniques in a comprehensive and practical review of transistor modeling. This book is destined to become the 'go to' reference on the subject.' Mark Pierpoint, Agilent Technologies 'Without accurate component models, even the most powerful circuit simulator cannot provide meaningful results. The old saying, 'Junk in-Junk out', summarizes the process. Nonlinear Transistor Model Parameter Extraction Techniques contains a wealth of theoretical and practical information. It should be read by every active RF/Microwave circuit ... as well as device designer.' Les Besser, author of COMPACT and founder of Besser Associates 'Nonlinear Transistor Model Parameter Extraction Techniques is an excellent book that covers this extremely important topic very well ... the editors have done a thorough job in putting together a complete summary of the important issues in this area. For a range of device technologies, the main themes that need to be addressed including measurement, extraction, DC and non-linear modelling, noise modelling, thermal issues and package modelling are covered in a clear but detailed manner, by experts in each area. I would highly recommend this title.' John Atherton, WIN Semiconductors '... a very nice guide to how the critical issues of model parameter of extraction are being solved right now and so it is a great resource for designers and modeling groups.' IEEE Microwave MagazineMore details
Series
Language
English
Place of publication
Cambridge
United Kingdom
Target group
Professional and scholarly
Product notice
Laminated cover
Illustrations
10 Tables, black and white; 273 Line drawings, unspecified
Dimensions
Height: 255 mm
Width: 177 mm
Thickness: 19 mm
Weight
870 gr
ISBN-13
978-0-521-76210-6 (9780521762106)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Matthias Rudolph | Christian Fager | David E. Root
Nonlinear Transistor Model Parameter Extraction Techniques
E-Book
11/2011
1st Edition
Cambridge University Press
€118.99
Available for download
Persons
Matthias Rudolph is the Ulrich-L.-Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology, Cottbus, Germany. Prior to this, he worked at the Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik (FBH), Berlin, where he was responsible for modeling of GaN HEMTs and GaAs HBTs and heading the low-noise components group. Christian Fager is an Associate Professor at Chalmers University of Technology, Sweden, where he leads a research group focusing on energy efficient transmitters and power amplifiers for future wireless applications. In 2002 he received the Best Student Paper Award at the IEEE International Microwave Symposium for his research on uncertainties in transistor small signal models. David E. Root is Agilent Research Fellow and Measurement and Modeling Sciences Architect at Agilent Technologies, Inc., where he works on nonlinear device and behavioral modeling, large-signal simulation, and nonlinear measurements for new technical capabilities and business opportunities. He is a Fellow of the IEEE and in 2007 he received the 2007 IEEE ARFTG Technology Award.
Content
1. Introduction M. Rudolph; 2. DC and thermal modeling: III-V FETs and HBTs M. Iwamoto, J. Xu and D. E. Root; 3. Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling S. R. Nedeljkovic, W. J. Clausen, F. Kharabi, J. R. F. McMacken and J. M. Gering; 4. Uncertainties in small-signal equivalent circuit modeling C. Fager, K. Andersson and M. Ferndahl; 5. The large-signal model: theoretical foundations, practical considerations, and recent trends D. E. Root, J. Horn, J. Xu and M. Iwamoto; 6. Large and packaged transistors J. Engelmann, F.-J. Schmueckle and M. Rudolph; 7. Characterization and modeling of dispersive effects O. Jardel, R. Sommet, J.-P. Teyssier and R. Quere; 8. Optimizing microwave measurements for model construction and validation D. Schreurs, M. Myslinski and G. Crupi; 9. Practical statistical simulation for efficient circuit design P. Zampardi, Y. Yang, J. Hu, B. Li, M. Fredriksson, K. Kwok and H. Shao; 10. Noise modeling M. Berroth.