III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics: Volume 535

This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.
 
This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.