Quantum Processes in Semiconductors
B. K. Ridley(Author)
Clarendon Press
3rd Edition
Published on 1. July 1993
Book
Hardback
378 pages
978-0-19-851752-8 (ISBN)
Article exhausted; check for reprint
Description
This text encapsulates the fundamental quantum processes of importance to the physics and technology of bulk semiconductors. This edition is expanded by the addition of a new chapter on phonon processes, including sections on scattering by imperfections and scattering by electrons.
More details
Edition
3rd Revised edition
Language
English
Place of publication
Oxford
United Kingdom
Publishing group
Oxford University Press
Target group
College/higher education
Professional and scholarly
Edition type
Revised edition
Illustrations
133 line drawings, bibliography, indexes
ISBN-13
978-0-19-851752-8 (9780198517528)
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Brian K. Ridley
Quantum Processes in Semiconductors
Book
12/1999
4th Edition
Oxford University Press
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Content
Part 1 Band structure of semiconductors: the crystal Hamiltonian; adiabatic approximation; phonons; the one-electron approximation; Bloch functions; nearly-free-electron model; energy gaps; spin-orbit coupling and orbital characteristics; band structures; chemical trends; k.p perturbation and effective mass; temperature dependence of energy gaps; deformation potentials; alloys. Part 2 Energy levels: the effective-mass approximation; electron dynamics; Zener-Bloch oscillations; Landau levels; plasma oscillations; excitons; hydrogenic impurities; hydrogen molecule centres; core effects; deep-level impurities; scattering states; impurity bands. Part 3 Lattice scattering: general features; energy and momentum conservation; acoustic phonon scattering; optical phonon scattering; polar optical mode scattering; piezoelectric scattering; scattering-induced electron mass; mobilities; appendix - acoustic waves in the diamond lattice. Part 4 Impurity scattering: general features; charged-impurity scattering; neutral-impurity scattering; central-cell contribution to charged-impurity scattering; dipole scattering; electron-hole scattering; electron-electron scattering; mobilities; appendix - Debye screening length, average separation of impurities, alloy scattering. Part 5 Radiative transitions: transition rate; photo-ionization and radiative capture cross-section; wavefunctions; direct interband transitions; photo-deionization of a hydrogenic acceptor; photo-ionization of a hydrogenic donor; photo-ionization of quantum-defect impurities; photo-ionization of deep-level impurities; summary of photo-ionization cross-sections; indirect transitions; indirect interband transitions; free-carrier absorption; free-carrier scattering of light; appendix - justification of effective-mass approximation in light scattering. Part 6 Non-radiative processes: electron-lattice coupling; the configuration co-ordinate diagram; semi-classical thermal generation rate; thermal broadening of radiative transitions; thermal generation and capture rates; electron-lattice coupling strength; selection rules for phonon-impurity coupling; phonon-cascade capture; the Auger effect; impact ionization; appendix - the multiphonon matrix element. Part 7 Quantum processes in a magnetic field: introduction; collision-free situation; collision-induced current; scattering mechanisms; transverse Shubnikov-de Haas oscillations; longitudinal Shubnikov-de Haas oscillations; magnetophonon oscillations. Part 8 Scattering in a degenerate gas: general equations; elastic collisions; acoustic phonon scattering; energy relaxation time. Part 9 Dynamic screening: introduction; polar optical modes; plasma modes; coupled modes; the Lindhard dielectric function; fluctuations; screening regimes.