Microelectronics Technology

An Analysis of Process Issues with Chemically Amplified Positive Resists ; The Annealing Concept for Environmental Stabilization of Chemical Amplification Resists ; Structure-Property Relationship of Acetal- and Ketal-Blocked Polyvinyl Phenols as Polymeric Binder in Two-Component Positive Deep-UV Photoresists ; Lithographic Effects of Acid Diffusion in Chemically Amplified Resists ; Acid Diffusion in Chemically Amplified Resists: The Effect of Prebaking and Post-Exposure Baking Temperature ; Correlation of the Strength of Photogenerated Acid with the Post-Exposure Delay Effect in Positive-Tone Chemically Amplified Deep-UV Resists ; Following the Acid: Effect of Acid Surface Depletion on Phenolic Polymers ; Water-Soluble Onium Salts: New Class of Acid Generators for Chemical Amplification Positive Resists ; Photoacid and Photobase Generators: Arylmethyl Sulfones and Benzyhydrylammonium Salts ; Functional Imaging with Chemically Amplified Resists ; Hydrogen Bonding in Sulfone- and N-Methylmaleimide-Containing Resist Polymers with Hydroxystyrene and Acetoxystyrene: Two-Dimensional NMR Studies ; NMR Investigation of Miscibility in Novolac-Poly(2-methyl-1-pentene sulfone) Resists ; Styrylmethylsulfonamides: Versatile Base-Solubilizing Components of Photoresist Resins ; 4-Methanesulfonyloxystyrene: A Means of Improving the Properties of tert-Butoxycarbonyloxystyrene-Based Polymers for Chemically Amplified Deep-UV Resists ; Dienone-Phenol Rearrangement Reaction: Design Pathway for Chemically Amplified Photoresists ; Single-Layer Resist for ArF Excimer Laser Exposure Containing Aromatic Compounds ; Design Considerations for 193-nm Positive Resists ; Top-Surface Imaged Resists for 193-nm Lithography ; Silicon-Containing Block Copolymer Resist Materials ; A Top-Surface Imaging Approach Based on the Light-Induced Formation of Dry-Etch Barriers ; Plasma-Developable Photoresist System Based on Polysiloxane Formation at the Irradiated Surface: A Liquid-Phase Deposition Method ; New Polysiloxanes for Chemically Amplified Resist Applications ; Environmentally Friendly Polysilane Photoresists ; Fluoropolymers with Low Dielectric Constants: Triallyl Ether-Hydrosiloxane Resins ; Photophysics, Photochemistry, and Intramolecular Charge Transfer of Polyimides ; Structure, Properties, and Intermolecular Charge Transfer of Polyimides ; Application of Polyisoimide as a Polyimide Precursor to Polymer Adhesives and Photosensitive Polymers ; Polyimide Nanofoams Prepared from Styrenic Block Copolymers ; Internal Acetylene Unit as a Cross-Link Site for Polyimides ; Vapor-Depositable Polymers with Low Dielectric Constants ; Plasma Polymerization in Direct Current Glow: Characterization of Plasma-Polymerized Films of Benzene and Fluorinated Derivatives ; Syntheses and Properties of Allylated Poly(2,6-dimethyl-1,4-phenylene ether) ; Synthesis and Photochemistry of a 2,6-Dialkoxyanthracene-Containing, Side-Chain-Substituted Liquid-Crystalline Polymer ; Hybrid Polyimide-Polyphenylenes by the Diels-Alder Polymerization Between Biscyclopentadienones and Ethynyl-Terminated Imides ; Polysiloxane Thermoplastic Polyurethane Modified Epoxy Resins for Electronic Application