CMOS Past, Present and Future
Published on 5. April 2018
Book
Paperback/Softback
278 pages
978-0-08-102139-2 (ISBN)
Description
CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.
The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.
The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.
More details
Series
Language
English
Place of publication
Cambridge
United Kingdom
Publishing group
Elsevier Science & Technology
Target group
Professional and scholarly
Materials scientist researchers and electronic engineers in research and design.
Dimensions
Height: 229 mm
Width: 152 mm
Weight
460 gr
ISBN-13
978-0-08-102139-2 (9780081021392)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Henry Radamson | Eddy Simoen | Jun Luo
CMOS Past, Present and Future
E-Book
04/2018
Woodhead Publishing
€185.00
Available for download
Persons
Henry H. Radamson received an M.Sc. degree in physics and the Ph.D. degree in semiconductor materials from Linkoeping University in Sweden, in 1989 and 1996, respectively. In 1997, he joined the Royal Institute of Technology in Stockholm as a senior scientist, where he has been an Associate Professor since 2001. Eddy Simoen is a Senior Researcher at IMEC, where he is currently involved in research on the defect and strain engineering in high-mobility and epitaxial substrates and defect studies in germanium and III-V compounds. Dr. Jun Luo joined the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, China in August, 2010. His current research interests cover the CMOS technology, Si/SiGe devices and process technology, energy harvesting devices based on Si technology and GaN-on-Si HEMTs. Dr. Zhao is a research professor and the Director of Integrated Circuit Advanced Process Center of IMECAS (Institute of Microelectronics of Chinese Academy of Science). In 1982, he graduated from Physics Department of Nanjing University in China with a Bachelor Degree. He received a master degree from University of Industry of Harbin in Semiconductor in 1988 and a PHD degree from Katholieke University of Leuven in Belgium in 1999. Between 2000 and 2010, he was working as a senior scientist in IMEC and took part in IMEC IIAP program on High-k, Cu connection, Cu contact and TSV 3D IC. His research experience and interest covers both FEOL and BEOL processing technologies in 8-inch and 12 inch pilot lines. He has authored and co-authored 130 scientific papers and has filed more than 80 invention patents in IC processing technology.
Author
Royal Institute of Technology, Stockholm, Sweden
Interuniversity Microelectronics Center (IMEC), Leuven, Belgium and Katholieke Universiteit Leuven, Belgium
Institute of Microelectronics of Chinese Academy of Sciences (IMECAS)
Director of Integrated Circuit Advanced Process Center of IMECAS (Institute of Microelectronics of Chinese Academy of Science)
Content
1. Brief introduction CMOS applications in our daily life
2. Basic definitions and equations
3. Electrical measurements (IV, short channel effects, mobility and noise)
4. CMOS Architecture
5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners)
6. High-k and metal gate (Almost all known high-k materials and metal gates)
7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds)
8. Contacts (Silicide formation, contact resistance, parasitic contacts)
9. Integration with photonic components (CMOS with lasers, detectors)
10. Technology roadmap (starting from 50's to unknown future)
11. Authors' final words
2. Basic definitions and equations
3. Electrical measurements (IV, short channel effects, mobility and noise)
4. CMOS Architecture
5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners)
6. High-k and metal gate (Almost all known high-k materials and metal gates)
7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds)
8. Contacts (Silicide formation, contact resistance, parasitic contacts)
9. Integration with photonic components (CMOS with lasers, detectors)
10. Technology roadmap (starting from 50's to unknown future)
11. Authors' final words