
III-V Quantum System Research
Klaus Ploog(Editor)
Institution of Engineering and Technology (Publisher)
Published on 15. November 1995
Book
Hardback
370 pages
978-0-85296-824-6 (ISBN)
Description
This volume reviews some of the most important frontiers of research with low-dimensional semiconductor structures. The contributors discuss various aspects of the properties, characterization and fabrication of these structures, which are of key significance to scientists and engineers.
More details
Series
Language
English
Place of publication
Stevenage
United Kingdom
Target group
College/higher education
Professional and scholarly
Illustrations
index
Dimensions
Height: 234 mm
Width: 156 mm
ISBN-13
978-0-85296-824-6 (9780852968246)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Content
Part 1 Fabrication: fabrication of GaAs quantum wire and quantum dot structures by MOCVD and investigation of their structural and electronic properties, T. Fukui; in situ lateral patterning of GaAs surfaces - a new route to one-and zero-dimensional structures by molecular beam epitaxy, L. Daweritz and R. Notzel; InAs quantum sheets and quantum dots in GaAs, O. Brandt; fabrication and electronic properties of antidot superlattices, K. Ensslin and R. Schuster; fabrication and electronic properties of coupled quantum wires, dots and rings, K. Ismail; focused ion beam direct writing of one-dimensional FETs, A. Wieck. Part 2 Properties and characterization: high-resolution transmission electron microscopy quantum systems, M. Hohenstein and R. Bierwolf; X-ray diffraction studies of single and multiple quantum wells, heterointerfaces and quantum wires of III-V semiconductor compounds, L. Tapfer; magneto-optics of (Al,Ga,In)As quantum systems, N. Pulsford; Fermi-edge singularity in (AlGaIn)As quantum systems, J. Wagner; resonance tunnelling and electric field domain formation in Ga-As-AlAs superlattices, J. Grahn.