
Gettering and Defect Engineering in Semiconductor Technology XI
Gadest 2005
Trans Tech (Publisher)
Published on 1. October 2005
Book
Paperback/Softback
830 pages
978-3-908451-13-6 (ISBN)
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Description
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at "La Badine" at the Giens peninsula south of France.
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at "La Badine" at the Giens peninsula south of France.
More details
Series
Language
English
Place of publication
Zurich
Switzerland
Target group
College/higher education
Professional and scholarly
Dimensions
Height: 24.5 cm
Width: 17 cm
Thickness: 42 mm
Weight
1600 gr
ISBN-13
978-3-908451-13-6 (9783908451136)
DOI
10.4028/www.scientific.net/SSP.108-109
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Content
Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion
Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material
Oxygen Precipitation in Nitrogen Doped CZ Silicon
From Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS Structures
Passivation of Ge Nanocrystals in SiO2
The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix
Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films
Stability of Emission Properties of Silicon Nanostructures
Blue Photoluminescence from Quantum Size Silicon Nanopowder
Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO2 Layer Obtained by Low Energy Ion Implantation
Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer
Ge Nanoclusters in GeO2: Synthesis and Optical Properties
?-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon
Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon
Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers
Electrical Properties of Clustered and Precipitated Iron in Silicon
Gettering Mechanism of Cu in Silicon Calculated from First Principles
Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations
Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon
The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon
Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon
Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time
Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
"New Donors" in Czochralski Grown Silicon Annealed at T? 600 degreesC under Compressive Stress
Formation of the Buried Insulating SixNy Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer
A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity
Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon
The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon
Evolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser Annealing
Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors
Metastable VO2 Complexes in Silicon: Experimental and Theoretical Modeling Studies
Hydrogen-Related Donors in Silicon: Centers with Negative Electronic Correlation Energy
Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon
Study of Au Diffusion in Nitrogen-Doped FZ Si
Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation
Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys
Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
VOn (n?3) Defects in Irradiated and Heat-Treated Silicon
Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon
On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers
Novel Low-K Dielectric Obtained by Xenon Implantation in SiO2
Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide Growth
Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon
Impact of Hydrogen Implantation on Helium Implantation Induced Defects
Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons
Defect Engineering in Ion Beam Synthesis of SiC and SiO2 in Si
Electrical Passivation of Silicon Wafers
Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties
Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects
Phase Transition on Surface of IV Group Semiconductors by Laser Radiation
Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon
A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon
First Principles Calculation for Point Defect Behavior, Oxygen Precipitation and Cu Gettering in Czochralski Silicon
On the Effect of Lead on Irradiation Induced Defects in Silicon
Formation and Properties of Iron-Phosphorus and Iron-Phosphorus-Hydrogen Complexes in Silicon
Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside
Effect of Self-Interstitials - Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si
Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters
Theoretical Investigations of the Diffusion of Nitrogen-Pair Defects in Silicon
General Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium Crystals
Low-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased Controllability
Defect Interaction Mechanisms between Antimony and Indium in Silicon
Formation of Vacancies and Divacancies in Plane-Stressed Silicon
Selective SiGe Etching Formed by Localized Ge Implantation on SOI
Impact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual Substrates
Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method
The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures
Strained Silicon on Ultrathin Silicon-Germanium Virtual Substrates
Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS
?avity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures
Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication
Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures
The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon
Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties
Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers
Multicrystalline Silicon from Different Types of Bridgman Furnaces: Ingot and Cell Properties
Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers
Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells
Investigation of Defects in the Edge Region of Multicrystalline Solar Silicon Ingots
Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices
DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon
Defect Behaviour in Deuterated and Non-Deuterated n-Type Si
Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo
EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si
Cobalt Contamination in Silicon
Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon
Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon
Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR
Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization
Potential and Limitations of Electron Holography in Silicon Research
Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
Infrared Absorption Measurement of Carbon Concentration down to 1x1014/cm3 in CZ Silicon
EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon
The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction
In-Line Monitor Introduction to Prevent Metallic Contamination in Wet Bench
Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods
The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface
Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy
Silicon Carbide: Defects and Devices
Ab Initio Investigations of Threshold Displacement Energies and Stability of Associated Defects in Cubic Silicon Carbide
Electrical Characterizations of Hydrogenated 4H-SiC Epitaxial Samples
Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon
Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates
Theoretical Investigations of the Energy Levels of Defects in Germanium
Some Recent Advances on the n-Type Doping of Diamond
Helium Implantation Damage in SiC
6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy
Current Transport by Defects in Pr2O3 High K Films
Pulsed Laser Deposition of Hafnium Oxide on Silicon
Modification of Silicon Oxide by High Energy Electron Beam
Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption
Structural Characterization of Epitaxial Si / Pr2O3 / Si(111) Heterostructures
Silicon Based Light Emitters for On-Chip Optical Interconnects
Rare Earth Ion Implantation for Silicon Based Light Emission
SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions
Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon
Dislocation Related PL of Multi-Step Annealed Cz-Si Samples
Defect Formation in MBE Er-Doped Si Light-Emitting Structures
Atomistic Nanodevice Simulation
Interfacing Biology with Electronic Devices
Thin SiGe Relaxed Buffer for Strain Adjustment
Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material
Oxygen Precipitation in Nitrogen Doped CZ Silicon
From Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS Structures
Passivation of Ge Nanocrystals in SiO2
The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix
Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films
Stability of Emission Properties of Silicon Nanostructures
Blue Photoluminescence from Quantum Size Silicon Nanopowder
Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO2 Layer Obtained by Low Energy Ion Implantation
Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer
Ge Nanoclusters in GeO2: Synthesis and Optical Properties
?-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon
Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon
Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers
Electrical Properties of Clustered and Precipitated Iron in Silicon
Gettering Mechanism of Cu in Silicon Calculated from First Principles
Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations
Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon
The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon
Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon
Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time
Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
"New Donors" in Czochralski Grown Silicon Annealed at T? 600 degreesC under Compressive Stress
Formation of the Buried Insulating SixNy Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer
A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity
Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon
The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon
Evolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser Annealing
Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors
Metastable VO2 Complexes in Silicon: Experimental and Theoretical Modeling Studies
Hydrogen-Related Donors in Silicon: Centers with Negative Electronic Correlation Energy
Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon
Study of Au Diffusion in Nitrogen-Doped FZ Si
Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation
Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys
Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
VOn (n?3) Defects in Irradiated and Heat-Treated Silicon
Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon
On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers
Novel Low-K Dielectric Obtained by Xenon Implantation in SiO2
Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide Growth
Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon
Impact of Hydrogen Implantation on Helium Implantation Induced Defects
Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons
Defect Engineering in Ion Beam Synthesis of SiC and SiO2 in Si
Electrical Passivation of Silicon Wafers
Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties
Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects
Phase Transition on Surface of IV Group Semiconductors by Laser Radiation
Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon
A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon
First Principles Calculation for Point Defect Behavior, Oxygen Precipitation and Cu Gettering in Czochralski Silicon
On the Effect of Lead on Irradiation Induced Defects in Silicon
Formation and Properties of Iron-Phosphorus and Iron-Phosphorus-Hydrogen Complexes in Silicon
Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside
Effect of Self-Interstitials - Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si
Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters
Theoretical Investigations of the Diffusion of Nitrogen-Pair Defects in Silicon
General Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium Crystals
Low-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased Controllability
Defect Interaction Mechanisms between Antimony and Indium in Silicon
Formation of Vacancies and Divacancies in Plane-Stressed Silicon
Selective SiGe Etching Formed by Localized Ge Implantation on SOI
Impact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual Substrates
Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method
The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures
Strained Silicon on Ultrathin Silicon-Germanium Virtual Substrates
Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS
?avity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures
Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication
Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures
The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon
Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties
Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers
Multicrystalline Silicon from Different Types of Bridgman Furnaces: Ingot and Cell Properties
Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers
Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells
Investigation of Defects in the Edge Region of Multicrystalline Solar Silicon Ingots
Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices
DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon
Defect Behaviour in Deuterated and Non-Deuterated n-Type Si
Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo
EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si
Cobalt Contamination in Silicon
Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon
Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon
Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR
Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization
Potential and Limitations of Electron Holography in Silicon Research
Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
Infrared Absorption Measurement of Carbon Concentration down to 1x1014/cm3 in CZ Silicon
EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon
The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction
In-Line Monitor Introduction to Prevent Metallic Contamination in Wet Bench
Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods
The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface
Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy
Silicon Carbide: Defects and Devices
Ab Initio Investigations of Threshold Displacement Energies and Stability of Associated Defects in Cubic Silicon Carbide
Electrical Characterizations of Hydrogenated 4H-SiC Epitaxial Samples
Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon
Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates
Theoretical Investigations of the Energy Levels of Defects in Germanium
Some Recent Advances on the n-Type Doping of Diamond
Helium Implantation Damage in SiC
6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy
Current Transport by Defects in Pr2O3 High K Films
Pulsed Laser Deposition of Hafnium Oxide on Silicon
Modification of Silicon Oxide by High Energy Electron Beam
Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption
Structural Characterization of Epitaxial Si / Pr2O3 / Si(111) Heterostructures
Silicon Based Light Emitters for On-Chip Optical Interconnects
Rare Earth Ion Implantation for Silicon Based Light Emission
SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions
Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon
Dislocation Related PL of Multi-Step Annealed Cz-Si Samples
Defect Formation in MBE Er-Doped Si Light-Emitting Structures
Atomistic Nanodevice Simulation
Interfacing Biology with Electronic Devices
Thin SiGe Relaxed Buffer for Strain Adjustment