Control of Semiconductor Interfaces
Proceedings of the First International Symposium, Karuizawa, Japan, 8-12 November 1993
Published on 31. May 1994
Book
Hardback
600 pages
978-0-444-81889-8 (ISBN)
Description
These proceedings contain a selection of papers presented at a symposium on semiconductor interfaces. Topics covered include metal/silicon, semiconductor hetero-interface, characterization, semiconducting new materials, control of interface properties and contact metallization.
These proceedings contain a selection of papers presented at a symposium on semiconductor interfaces. Topics covered include metal/silicon, semiconductor hetero-interface, characterization, semiconducting new materials, control of interface properties and contact metallization.
These proceedings contain a selection of papers presented at a symposium on semiconductor interfaces. Topics covered include metal/silicon, semiconductor hetero-interface, characterization, semiconducting new materials, control of interface properties and contact metallization.
More details
Language
English
Place of publication
Oxford
United Kingdom
Publishing group
Elsevier Science & Technology
Target group
Professional and scholarly
Illustrations
index
ISBN-13
978-0-444-81889-8 (9780444818898)
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Schweitzer Classification
Other editions
Additional editions
I. Ohdomari | M. Oshima | A. Hiraki
Control of Semiconductor Interfaces
Proceedings of the First International Symposium, on Control of Semiconductor Interfaces, Karuizawa, Japan, 8-12 November, 1993
E-Book
05/2017
Elsevier
€70.95
Available for download
Persons
Content
Plenary; metal/silicon; semiconductor hetero-interface; characterization (I); semiconducting new materials; metal/compound semiconductor; SiO2/Si; characterization (II); insulator/semiconductor; characterization (III); interface in device; control of interface formation - Si; control of interface properties - Si; contact metallization - Si; characterization - Si; control of interface formation - compound semiconductors; control of interface properties - compound semiconductors; contact metallization - compound semiconductors; characterization - compound semiconductors. (Part contents).