Thin Film and Depth Profile Analysis
Published on 1. November 1984
Book
Hardback
XII, 208 pages
978-3-540-13320-9 (ISBN)
Description
The characterization of thin films and solid interfaces as well as the determina tion of concentration profiles in thin solid layers is one of the fields which re quire a rapid transfer of the results from basic research to technological applica tions and developments. It is the merit of the Dr. Wilhelm Heinrich and Else Heraeus-Stiftung to promote such a transfer by organizing high standard seminars mostly held at the "Physikzentrum" in Bad Honnef near Bonn. The present book has been stimulated by one of these seminars assembling most of the invited speakers as co-authors. The editor appreciates the cooperation of his colleagues contributing to this book. H. Oechsner Kaiserslautern, April 1984 v Contents 1. Introduction. ByH. Oechsner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 1 Requirements for Thin Film and In-Depth Analysis . . . . . . . . . . . . . . . . . . . 1 1. 2 Object and Outl i ne of the Book . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 References 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis. By H. W. Werner (With 25 Fi gures) . . . . . . . . . . . . . . . . 5 2. 1 Methods to Determine Chemical Structures in Material Research 5 2. 2 Selected Analytical Features Used to Determine Chemical Structures 9 2. 2. 1 Depth Profi 1 ing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 a) Destructive Depth Profiling b) Nondestructive Methods for Depth and Thin Film Analysis 15 19 2. 2. 2 Microspot Analysis and Element Imaging 2. 3 Determining Physical Structures in Material Research . . . . . . . . . . . . . . . 27 2. 3. 1 X-Ray Diffraction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 2. 3. 2 X-Ray Double Crystal Diffraction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2. 3.
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Content
1. Introduction..- 1.1 Requirements for Thin Film and In-Depth Analysis.- 1.2 Object and Outline of the Book.- References.- 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis..- 2.1 Methods to Determine Chemical Structures in Material Research.- 2.2 Selected Analytical Features Used to Determine Chemical Structures.- 2.2.1 Depth Profiling.- a) Destructive Depth Profiling.- b) Nondestructive Methods for Depth and Thin Film Analysis.- 2.2.2 Microspot Analysis and Element Imaging.- 2.3 Determining Physical Structures in Material Research.- 2.3.1 X-Ray Diffraction.- 2.3.2 X-Ray Double Crystal Diffraction.- 2.3.3 Ultrasonic (Acoustic) Microscopy.- 2.4 Application of Different Microanalytical Techniques to Specific Analytical Problems.- 2.4.1 AES and TEM-EDX in Interface Analysis of MnZn Ferrites.- 2.4.2 Interfaces of SrTiO3 Boundary Layer Capacitor Material Studies by TEM and Selected-Area EDX.- 2.4.3 Analysis of GaAlAs with SIMS, X-Ray Diffraction and AES.- 2.5 Future Prospects.- References.- 3. Depth Profile and Interface Analysis of Thin Films by AES and XPS.- 3.1 Quantification from First Principles.- 3.2 Initial Transient Layer.- 3.3 Steady-State Region.- 3.4 Film-Substrate Interface.- References.- 4. Secondary Neutral Mass Spectrometry (SNMS) and Its Application to Depth Profile and Interface Analysis..- 4.1 Background.- 4.2 Experimental Method.- 4.2.1 Related Techniques.- 4.2.2 Performance of SNMS.- a) The Postionizing Method.- b) Operation Modes of SNMS.- 4.3 Quantification of SNMS.- 4.3.1 Quantification for Atomic Sputtering.- 4.3.2 Quantification Using Molecular SNMS Signals.- 4.3.3 Sensitivity of SNMS.- 4.4 Applications of SNMS to Depth Profile Analysis.- 4.4.1 General Considerations.- 4.4.2 Examples of Depth Profiling by SNMS.- 4.5 Concluding Remarks.- References.- 5. In-Situ Laser Measurements of Sputter Rates During SIMS/AES In-Depth Profiling..- 5.1 Background.- 5.2 Principles of Laser Technique.- 5.2.1 Laser Optical Arrangement.- 5.2.2 Phase and Reflectance Measurement.- 5.2.3 Fundamentals of Sputter-Rate Determination.- 5.3 Experiments.- 5.4 Results and Discussion.- 5.4.1 Signal Artefacts.- 5.4.2 Phase and Reflectance Measurements During Sputtering.- a) Sputtering of Silicon Surfaces.- b) Doped Silicon.- c) Metal Film Material.- d) Transparent Material.- e) Opaque and Transparent Multilayers.- 5.5 Conclusion.- 5.A. Appendix.- A.1. Opaque Material.- A.2. Transparent Material.- References.- 6. Physical Limitations to Sputter Profiling at Interfaces - Model Experiments with Ge/Si Using KARMA..- 6.1 Background.- 6.1.1 General Problems Encountered in Sputter Profiling.- 6.1.2 Requirements for a Model Experiment.- 6.2 Experimental Approach.- 6.2.1 KARMA.- 6.2.2 Sample Preparation.- 6.3 Conversion of Raw Sputter Profiles into Depth Profiles.- 6.3.1 Establishing the Depth Scale.- 6.3.2 Escape-Depth Correction.- 6.3.3 Self-Consistent Determination of Effective Mean Free Paths.- 6.4 Depth Profiles of the Ge/Si Interface.- 6.4.1 Asymmetry of Depth Profiles.- 6.4.2 Broadening as a Function of Ion Mass and Energy.- 6.5 Dose Effects and Preferential Sputtering.- 6.5.1 Dose Effects.- 6.5.2 Preferential Sputtering.- 6.6 Depth Resolution in Sputter Profiling.- 6.6.1 Depth Resolution Limits.- 6.7 Summary and Outlook.- References.- 7. Depth Resolution and Quantitative Evaluation of AES Sputtering Profiles.- 7.1 Background.- 7.2 Calibration of the Depth Scale.- 7.3 Calibration of the Concentration Scale.- 7.4 Depth Resolution in Sputter Profiling.- 7.5 Determination of the Resolution function.- 7.5.1 Definition of Depth Resolution.- 7.5.2 Experimental Determination of Depth Resolution.- 7.5.3 Model Descriptions of Depth Resolution.- 7.6 Deconvolution Procedures.- 7.7 Conclusion.- References.- 8. The Theory of Recoil Mixing in Solids.- 8.1 Background.- 8.1.1 Nomenclature.- 8.2 Review of Recoil Mixing Models.- 8.2.1 Primary Recoil Implantation and Mixing.- 8.2.2 Cascade Mixing.- a) Random-Walk Models.- b) Transport Theory Approach.- c) Miscellaneous Approaches.- 8.3 General Formulation of Atomic Relocation Phenomena.- 8.3.1 Target Description.- a) Unbounded Total Density N(?,x).- b) Total Density Bounded to N(x) = No.- 8.3.2 Description of Atomic Relocation.- 8.3.3 Balance Equation for Atomic Relocation.- a) The Diffusion Approximation.- 8.4 Solutions to the Specific Mixing Models.- 8.4.1 Thermal Mixing and Thermal Diffusion.- 8.4.2 Recoil Mixing.- a) Cascade Mixing, Diffusion Approaches.- b) Cascade Mixing, Forthright Solutions.- 8.5 Summary and Outlook.- 8.6 List of Symbols.- References.- Additional References with Titles.