Complete Guide to Semiconductor Devices
2nd Edition
Published on 14. August 2002
Book
Hardback
XXVI, 742 pages
978-0-471-20240-0 (ISBN)
Description
Provides an overview of a complete collection of semiconductor devices.
* Presents self-contained data on over 180 device variations.
* Suitable for a wide variety of audiences--from students to practitioners to laypeople.
Reviews / Votes
"...I feel that I?m performing a public service for readers by recommending The Complete Guide to Semiconductor Devices, Second Edition...covers just about anything you?d care to know about semiconductors.... This new edition...is a testament to the endurance of the earlier work." (Chip Scale, March 2003) "...this book...is an impressive achievement...I would recommend its addition to any university library?s science or engineering reference collection." (E-Streams, Vol. 6, No. 5, May 2003)"...a useful text and one that should be available in a well-stocked library..." (ChemPhysChem, Vol 4(8), 2003)
More details
Product info
gebunden
Edition
2. Auflage
Language
English
Place of publication
United States
Publishing group
John Wiley & Sons Inc
Target group
College/higher education
Professional and scholarly
Edition type
New edition
Dimensions
Height: 23.9 cm
Width: 16 cm
Thickness: 4 cm
Weight
1162 gr
ISBN-13
978-0-471-20240-0 (9780471202400)
Schweitzer Classification
Person
KWOK K. NG received his PhD from Columbia University in 1979 and his BS degree from Rutgers University in 1975, both in electrical engineering. Since 1980, he has been a Technical Manager with Agere Systems (formerly Bell Laboratories of AT&T and then of Lucent Technologies) at the Murray Hill location in New Jersey. His activities include Si MOS devices, SiGe heterojunction bipolar transistors, and recently compound-semiconductor high-speed and high-power devices. Dr. Ng has held positions as editor of IEEE Electron Device Letters and as liaison to IEEE Press.
Content
Preface.
Preface to the First Edition.
Introduction.
DIODES I: RECTIFIERS.
p-n Junction Diode.
p-i-n Diode.
Schottky-Barrier Diode.
Planar-Doped-Barrier (PDB) Diode.
Isotype Heterojunction.
DIODES II: NEGATIVE RESISTANCE N-SHAPED.
Tunnel Diode.
Transferred-Electron Device (TED).
Resonant-Tunneling Diode.
Resonant-Interband-Tunneling (RIT) Diode.
Single-Barrier Tunnel Diode.
Single-Barrier Tunnel Diode.
Single-Barrier Interband-Tunneling Diode.
Real-Space-Transfer (RST) Diode.
DIODES III: NEGATIVE RESISTANCE S-SHAPED.
Metal-Insulator-Semiconductor Switch (MISS).
Planar-Doped-Barrier (PDB) Switch.
Amorphous Threshold Switch.
Heterostructure Hot-Electron Diode (HHED).
DIODES IV: NEGATIVE RESISTANCE TRANSIT-TIME.
Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode.
Barrier-Injection Transit-Time (BARITT) Diode.
RESISTIVE AND CAPACITIVE DEVICES.
Resistor.
Metal-Oxide-Semiconductor (MOS) Capacitor.
Charge-Coupled Device (CCD).
TRANSISTORS I: FIELD-EFFECT.
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).
Junction Field-Effect Transistor (JFET).
Metal-Semiconductor Field-Effect Transistor (MESFET).
Modulation-Doped Field-Effect Transistor (MODFET).
Permeable-Base Transistor.
Static-Induction Transistor (SIT).
Real-Space-Transfer (RST) Transistor.
Planar-Doped Field-Effect Transistor.
Surface-Tunnel Transistor.
Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET).
Stark-Effect Transistor.
Velocity-Modulation Transistor (VMT).
TRANSISTOR II: POTENTIAL-EFFECT.
Bipolar Transistor.
Tunneling Hot-Electron-Transfer Amplifier (THETA).
Metal-Base Transistor.
Bipolar Inversion-Channel Field-Effect Transistor (BICFET).
Tunnel-Emitter Transistor (TETRAN).
Planar-Doped-Barrier (PDB) Transistor.
Heterojunction Hot-Electron Transistor (HHET).
Induced-Base Transistor.
Resonant-Tunneling Bipolar Transistor (RTBT/RBT).
Resonant-Tunneling Hot-Electron Transistor (RHET).
Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT).
Spin-Valve Transistor.
NONVOLATILE MEMORIES.
Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor.
Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor.
THYRISTORS AND POWER DEVICES.
Silicon-Controlled Rectifier (SCR).
Insulated-Gate Bipolar Transistor (IGBT).
Static-Induction Thyristor (SIThy).
Unijunction Transistor.
PHOTONICS I: LIGHT SOURCES.
Light-Emitting Diode (LED).
Injection Laser.
PHOTONICS II: PHOTODETECTORS.
Photoconductor.
p-i-n Photodiode.
Schottky-Barrier Photodiode.
Charge-Coupled Image Sensor (CCIS).
Avalanche Photodiode (APD).
Phototransistor.
Metal-Smiconductor-Metal (MSM) Photodetector.
Quantum-Well Infrared Photodetector (QWIP).
Quantum-Dot Infrared Photodetector (QDIP).
Blocked-Impurity-Band (BIB) Photodetector.
Negative-Electron-Affinity (NEA) Photocathode.
Photon-Drag Detector.
PHOTONICS III: BISTABLE OPTICAL DEVICES.
Self-Electrooptic-Effect Device (SEED).
Bistable Etalon.
PHOTONICS IV: OTHER DEVICES.
Solar Cell.
Electroabsorption Modulator.
Thermistor.
Hall Plate.
Strain Gauge (Gage).
Interdigital Transducer (IDT).
Ion-Sensitive Field-Effect Transistor (ISFET).
Appendix A: Selected Nonsemiconductor Devices.
Appendix B: Physical Phenomena.
Appendix C: General Applications of Device Groups.
Appendix D: Physical Properties.
Appendix E: Background Information.
Index.