Complete Guide to Semiconductor Devices
Published on 1. January 1995
Book
Paperback/Softback
676 pages
978-0-07-113527-6 (ISBN)
Description
This text provides an overview of existing semiconductor devices. Each device is covered in one short, self-contained chapter for quick review, minimizing the need to cross-refer, and allowing students to compare relative merits of classes of electronic components, such as economic trade-offs.
More details
Language
English
Place of publication
London
United Kingdom
Publishing group
McGraw-Hill Education - Europe
Target group
College/higher education
Adult education
Illustrations
480 illustrations
Dimensions
Height: 240 mm
Width: 163 mm
Weight
860 gr
ISBN-13
978-0-07-113527-6 (9780071135276)
Copyright in bibliographic data is held by Nielsen Book Services Limited or its licensors: all rights reserved.
Schweitzer Classification
Content
Part 1 Diodes I - rectifiers: p-n junction diode; p-i-n diode; Schottky-barrier diode; planar-doped-barrier diode; isotype-heterojunction barrier. Part 2 Diodes II - negative resistance: tunnel diode; transferred-electron device (TED); impact-ionization avalanche transit-time (IMPATT); barrier-injection transit-time (BARITT) diode; resonant-tunnelling diode; real-space-transfer (RST) diode. Part 3 Resistive devices: resistor; Ohmie contact. Part 4 Capacitive devices: metal-oxide-semiconductor (MOS) capacitor; charge-coupled device (CCD). Part 5 Switches: metal-insulator-semiconductor switch (MISS); planar-doped barrier switch; amorphous threshold switch. Part 6 Transistor I - field-effect: metal-oxide-semiconductor field-effect transistor (MOSFET). Part 7 Transistors II - potential-effect. Part 8 Transistors III - hot-electron. Part 9 Light sources. Part 10 Photodetectors. Appendices: selected non-semiconductor devices; physical phenomena. (Part contents).