Semiconductor Physics and Devices
Basic Principles
Donald A. Neamen(Author)
McGraw-Hill Education (ISE Editions) (Publisher)
Published in September 1997
Book
Paperback/Softback
650 pages
978-0-07-114563-3 (ISBN)
Article exhausted; check for reprint
Description
This text aims to provide the fundamentals necessary to understand semiconductor device characteristics, operations and limitations. Quantum mechanics and quantum theory are explored, and this background helps give students a deeper understanding of the essentials of physics, semiconductor material physics and semiconductor device physics and how they interelate. Throughout the text new computer-driven problems and examples have been added using numerical techniques, MATLAB, Mathcad and PSpice, and the whole edition emphasizes the value of the computer as a tool in design and problem solving.
More details
Edition
International 2 Revised ed
Language
English
Place of publication
London
United Kingdom
Publishing group
McGraw-Hill Education - Europe
Target group
College/higher education
Dimensions
Height: 230 mm
Weight
1330 gr
ISBN-13
978-0-07-114563-3 (9780071145633)
Copyright in bibliographic data is held by Nielsen Book Services Limited or its licensors: all rights reserved.
Schweitzer Classification
Other editions
New editions

Donald Neamen
Semiconductor Physics and Devices
Book
10/2002
3rd Edition
McGraw Hill Higher Education
€55.70
No shipping information available
Previous edition
Book
05/1992
Irwin Professional Publishing
€87.89
Article exhausted; check for reprint
Content
Prologue: semiconductors and the integrated circuit; the crystal structure of solids; introduction to quantum mechanics and the quantum theory of solids; the semiconductor in equilibrium; transport phenomena; nonequilibrium excess carriers in semiconductors; the PN junction; the PN junction diode; metal-semiconductor and semiconductor heterojunctions; the junction field effect transistor; the bipolar transistor; fundamentals of the metal-oxide-semiconductor field-effect transistor; additional metal-oxide-semiconductor field-effect transistor concepts.