
The Blue Laser Diode
The Complete Story
Springer (Publisher)
2nd Edition
Published on 28. August 2000
Book
Hardback
XVI, 368 pages
978-3-540-66505-2 (ISBN)
Description
Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.
Reviews / Votes
FROM A REVIEW OF THE FIRST EDITION"The technical chapters will be lapped up by semiconductor specialists keen to know more ... the book includes fascinating material that answers the question: why did Nakamura succeed where many, much larger, research groups failed."
(NEW SCIENTIST)
More details
Edition
Second Edition 2000
Language
English
Place of publication
Berlin
Germany
Publishing group
Springer Berlin
Target group
Professional and scholarly
Research
Edition type
New edition
Illustrations
81 s/w Abbildungen, 17 farbige Abbildungen
XVI, 368 p. 98 illus., 17 illus. in color.
Dimensions
Height: 241 mm
Width: 160 mm
Thickness: 29 mm
Weight
817 gr
ISBN-13
978-3-540-66505-2 (9783540665052)
DOI
10.1007/978-3-662-04156-7
Schweitzer Classification
Other editions
Additional editions

Book
12/2010
2nd Edition
Springer
€320.99
Shipment within 7-9 days
Previous edition
Book
02/1997
Springer
€85.59
Article exhausted; check for reprint
Content
1. Introduction.- 2. Background.- 3. Physics of Gallium Nitride and Related Compounds.- 4. GaN Growth.- 5. p-Type GaN Obtained by Electron Beam Irradiation.- 6. n-Type GaN.- 7. p-Type GaN.- 8. InGaN.- 9. Zn and Si Co-Doped InGaN / AlGaN Double-Heterostructure Blue and Blue-Green LEDs.- 10. InGaN Single-Quantum-Well LEDs.- 11. Room-Temperature Pulsed Operation of Laser Diodes.- 12. Emission Mechanisms of LEDs and LDs.- 13. Room Temperature CW Operation of InGaN MQW LDs.- 14. Latest Results: Lasers with Self-Organized InGaN Quantum Dots.- 15. Conclusions.- Biographies.- Shuji Nakamura.- Gerhard Fasol.- Stephen Pearton.- References.