Principles and Technology of Modulation Doped Field Effect Transistors: v. 1
Published on 29. April 1991
Book
Hardback
284 pages
978-0-471-92920-8 (ISBN)
Description
Since the invention of the transistor, there has been a great deal of activity and progress in semiconductor technology and understanding, particularly in new heterostructures and superlattices as well as devices based on them. With the development of high quality SiO2 on Si having low interface state densities, MOSFET devices relying on the high mobility two dimensional electron became available in the 1960s and represent the workhorse of integrated circuits today. Two-dimensional electron gas, similar to that in MOSFETs, can also be obtained at GaAs/AlGaAs interfaces which provides even higher mobility, higher velocity and a lattice matched interface. MOSFET-like devices, called MODFETs, have already achieved switching speeds of about 5 Ps at 77K, current gain cut-off frequencies of about 250 GHz and maximum oscillation frequencies of about 400 GHz. In addition to GaAs/AIGaAs on GaAs, the strained system of InGaAs/AIGaAs on GaAs and the InGaAs/InAlAs system on InP substrates have been investigated. In fact, the InP system, at the time of this writing, held the milimeter wave fT current gain cut-off frequency record and yielded extremely low-noise operation, 1dB at 60 Ghz for 0.2 mu gate lengths.
In this book, fundamentals, technology and performance of MODFETs, both as microwave and digital devices, are treated in detail. In addition, introductory material particularly that dealing with semiconductor and heterojunction physics, where applicable, is also provided. The book is arranged into two volumes with a total of nine chapters. Volume 1 contains Chapters 1 to 5, and Volume 2 covers Chapters 6 to 9.
In this book, fundamentals, technology and performance of MODFETs, both as microwave and digital devices, are treated in detail. In addition, introductory material particularly that dealing with semiconductor and heterojunction physics, where applicable, is also provided. The book is arranged into two volumes with a total of nine chapters. Volume 1 contains Chapters 1 to 5, and Volume 2 covers Chapters 6 to 9.
More details
Series
Language
English
Place of publication
Chichester
United Kingdom
Publishing group
John Wiley and Sons Ltd
Target group
College/higher education
Professional and scholarly
Illustrations
Ill.
Dimensions
Height: 92 mm
Width: 52 mm
Weight
720 gr
ISBN-13
978-0-471-92920-8 (9780471929208)
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Schweitzer Classification
Persons
Content
Part 1 Developments in heterostructure high speed devices: synthesis of thin film heterostructures based on III-V compounds; superlattices and quantum wells; two dimensional electron gas (2DEG) - Hall effect; applications to high-speed devices - modulation doped field effect transistors, meterojunction bipolar transistors (HBTs). Part 2 The technology of growth and fabrication of MODFETS: growth of thin film heterostructures by MBE; basics of the MBE process; MBE equipment; substrate preparation and growth of MDHs - growth on GaAs substrates, growth on Si and Ge substrates; in-situ characterization of heteroepitaxial layers - alloy composition control, interface quality control; ex-situ characterization of heteroepitaxial layers - transmission electron microscopy (TEM) technique, optical techniques; defects associated with the misfit accommodation - growth morphology, stability of heteroepitaxial layers; fabrication of modulation doped FETS; metal-semiconductor contacts - capacitance-voltage characteristics of Schoffky diodes, current-voltage (I-V) characteristics, barrier heights, ohmic contacts; the contract resistance measurement. Part 3 Properties of heterostructures in equilibrium: the materials properties of binary III-V compounds - crystal structure properties, sites, directions and planes in a crystal, energy bands and dispersion relation (k.p theory); the thermodynamics of interfaces - thermodynamic potentials of single phase, themodynamic equilibrium across the interfaces; superlattice bank structure in the envelope function approximation; stress and strain in thin heterostructure films - strain from the differences of the thermal expansion, strain effects due to lattice mismatch; strain effects on the electronic properties of heterostructures - strain effects on the energy bandgaps, envelope function approximation in strain layer superlattices, effect of strain on the carrier densities; charge neutrality and position of the fermi-level; built-in potential; band disontinuities - theoretical predictions, experimental measurements, electrical measurements. Part 4 Modulation doped heterostructures in equilibrium: general background; properties of two-dimensional structures; two-dimensional electron gas concentration; approximate analytic solutions; self-consistent solution for single heterostructures; self-consistent solutions for arbitrary heterostructures; discussions. Part contents.