Ultra Clean Processing of Semiconductor Surfaces XVI

<ul><li>Preface</li><li>Chapter 1: Progress in Semiconductor Technologies</li><li>Past, Present, and Future of Semiconductor Cleaning Technology</li><li>Nanosheet-Based Transistor Architectures for Advanced CMOS Scaling: Wet Etch and Gas Phase Etch Challenges in Confined Spaces</li><li>On Gas-Phase Selective Dry Etching in 3D Inflections</li><li>Chapter 2: Selective Etching of SiGe Alloy Semiconductors</li><li>SiGe Selective Etching to Enable Bottom and Middle Dielectric Isolations for Advanced Gate-All-Around FET Architecture</li><li>Selectivity Tuning by Peroxide Concentration for the Selective Etching of SiGe20 to Si and SiGe40 to SiGe20</li><li>Investigation of Selective Wet Etching of SiGe Substrates for High-Performance Device Manufacturing</li><li>Highly Selective Etching of SiGe to Si for GAAFET</li><li>Chapter 3: Surface Chemistry of Group IV Semiconductors</li><li>Atomic Level Chemical and Structural Properties of Silicon Surface and Initial Stages of Oxidation</li><li>Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces</li><li>Silicon and Germanium Corrosion by Fluorinated Chemistry in Presence of Wafer Charging</li><li>Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water</li><li>Reaction Mechanism Analysis of Si Selective Etching for Gate-All-Around Transistors by Molecular Simulations</li><li>Chapter 4: Surface Chemistry of Compound Semiconductors</li><li>Surface Characterization - Gallium Nitride Depth Profiling with LEIS</li><li>Effect of Post-Etch Wet Cleaning on GaAs Surfaces</li><li>Chapter 5: Pattern Collapse in Semiconductor Device Manufacturing</li><li>Pattern Collapse Simulation in CMOS Image Sensors Devices</li><li>Observation of Capillary Condensation and Pattern Bending Phenomena in Si Nanopillars Using <i>In Situ</i> TEM</li><li>Improvement of Fingering-Induced Pattern Collapse by Adjusting Chemical Mixing Procedure</li><li>Modeling of Capillary Pattern Collapse on Sub-5nm Pillars Using Molecular Dynamics</li><li>Insights into FinFET Structure Collapse: A Reactive Force Field-Based Molecular Dynamics Investigation</li><li>Chapter 6: Etching of Dielectrics</li><li>Silicon Nitride Selective Functionalization with Aqueous Cellulose</li><li>Selective Si₃N₄ Etching for 3D NAND Integration by Using Low Concentration of H₃PO₄</li><li>Investigation of Oxide Regrowth in the Selective Si₃N₄ Etching Process for 3D NAND Fabrication by Using Finite Element Modeling Simulation</li><li>Methods for Uniform Wet Etching in Narrow Trenches and Vias</li><li>Chapter 7: Assessment and Control of Contaminations in Technological Fluids and Air</li><li>Application of Hydrosol to Aerosol Based Metrology to Predict Wafer Defects from Process Chemical Contamination</li><li>Nanoparticle Analyzing Technique Review and Sub-10 nm Nanoparticle Sizing Methods Comparison</li><li>On-Line Metal Concentration Measurement at an Ultra-Trace Level in DIW by Solid Phase Extraction Method Coupled with ICP-MS</li><li>Real Time AMC Monitoring with Novel Chemical Ionization Mass Spectrometry at Single-Digit pptv Concentrations</li><li>Monitoring of Trace Molecular Impurities in Clean-Room Air</li><li>Investigation of Effects of Sulfuric Acid in Single Wafer Cleaning Process Using Isopropyl Alcohol</li><li>Chapter 8: Contaminations on Wafer Surfaces</li><li>Direct Analysis of Si, SiC and GaN Wafers by LA-GED-MSAG-ICP-MS</li><li>Chemical Identification of Sub-20 nm Defects and Sub-Monolayer Residues with Nano IR PiFM</li><li>Development of Intentional Contamination in Iron by Bath for Silicon Wafers and Evaluation of VPD-Bulk and LPD-Bulk for Metallic Contaminants Analyses by ICPMS</li><li>Defect Mapping and Densification in Self-Assembled Monolayers of Octadecyltrichlorosilane on SiO₂</li><li>Fine Edge and Bevel Film Cut Accuracy by a Novel and High Precision Wafer Centering System</li><li>Chapter 9: Modelling of Wet Etching and Cleaning Processes</li><li>Fluid Simulation over a Rotating Disk: Momentum and Mass Transfer across the Wafer Boundary</li><li>Etch Profile Prediction Model Using Convolutional Neural Network</li><li>ESD Prevention Technology for Two-Fluid Pure Water Spray Cleaning with Controlled Electrostatic Charge</li><li>Chapter 10: Particle Removal</li><li>Parametric Studies on Particle Removal and Erosion in Nozzle Injection Megasonic Cleaning</li><li>Optimal Injection Distance in Ultrasonic Water Flow Cleaning</li><li>Design of "Soft" Cleaning Processes for Emerging Substrates via Stimuli Responsive Chemistry</li><li>Evaluation and Optimization of Particle Removal with a Resist Peeling Method</li><li>Pinpoint Particle Removal for EUV Pellicle Productivity Enhancement</li><li>Electrostatic-Induced Particle Behavior Simulation Framework in Cleaning Process: Interaction between Solid-Liquid Interfaces</li><li>Chapter 11: Sustainability Aspects in Wet Processing</li><li>Sulfuric Acid Reduction in Post-Ash Cleans</li><li>Reduction of Process Chemicals and Energy Use in Single-Wafer Process Applications</li><li>Eco-Friendly SPM Alternative Resist Stripping with High-Concentration O₃-Water Technology</li><li>Chapter 12: Materials and Technologies for Interconnects</li><li>Slurry Activation for Enhanced Surface Redox Reactions in CMP</li><li>New Quaternary Amines and Solvents for Photoresist Developing and Stripping Applications</li><li>Alkali Wet Chemicals for Ru with Advanced Semiconductor Technology Nodes</li><li>Wet Cleaning of Ru Semi-Damascene 18 MP Structures</li><li>A Cleaning Method for Post-Etch Ruthenium Residue Removal Using UV and Liquid Chemical</li><li>Wet Cleaning/Etching of NiAl Thin Film</li><li>Plasma Oxidation of Patterned Mo Nanowires for Precise and Uniform Dry Etching</li><li>Controlled and Uniform Wet Etching of Molybdenum Nanowires</li><li>Selective Removal of Various Resilient Ionic and Halides-Based Surface Contaminants by Wet Cleaning</li></ul>