Semiconductor Device Modeling with SPICE
McGraw-Hill Professional (Publisher)
2nd Edition
Published on 31. July 1993
Book
Hardback
479 pages
978-0-07-002469-4 (ISBN)
Description
SPICE (Software Program with Integrated Circuit Emphasis) is a powerful design aid that electronics engineers learn and is the world standard for circuit simulation. And when circuit designers are using the various versions of SPICE to simulate circuits prior to fabrication and accurately predict future performance, this guide could be a useful reference. This revised version explains the ins and outs of SPICE, plus gives new data on modelling advanced devices such as MESFETs, ISFETs, and thyristors. The book should help readers gain maximum value from SPICE, also covering both MOS and FET models. Step by step, it takes the reader through the modelling process, providing complete information on a variety of semiconductor devices for designing specific circuit applications. These include: Pn junction and Schottky diodes; bipolar junction transistor (BJT); junction field effect transistor (JFET); metal oxide semiconductor field effect transistor (MESFET); ion sensitive field effect transistor (ISFET); and semiconductor controlled rectifier (SCR-thyristor).
Given the immense and growing acceptance of SPICE, this revision should appeal to the audience of engineers, technicians, and students who use this design program.
Given the immense and growing acceptance of SPICE, this revision should appeal to the audience of engineers, technicians, and students who use this design program.
More details
Edition
2nd edition
Language
English
Place of publication
United States
Publishing group
McGraw-Hill Education - Europe
Target group
Professional and scholarly
Illustrations
200 illustrations
Dimensions
Height: 236 mm
Width: 158 mm
Thickness: 33 mm
Weight
817 gr
ISBN-13
978-0-07-002469-4 (9780070024694)
Copyright in bibliographic data is held by Nielsen Book Services Limited or its licensors: all rights reserved.
Schweitzer Classification
Persons
Paolo Antognetti is a professor and chairman of the department of electronic engineering (DIBE) at the University of Genova. His extensive background in semiconductor modeling includes teaching and research positions at Stanford University and MIT. He has contributed to more than fifty papers in the field of electronics and VSLI design and simulation. He has edited several books, including Power Integrated Circuits: Physics, Design, and Applications, also published by McGraw-Hill.
Content
PN-Junction Diode and Schottky Diode.Bipolar Junction Transistor (BJT).Junction Field-Effect Transistor (JFET).Metal Oxide-Semiconductor Transistor (MOST).BJT Parameter Measurements.MOST Parameter Measurements.Noise and Distortion.The SPICE Program.Metal-Semiconductor Field-Effect Transistor, Ion-Sensitive Field-Effect Transistor, and Semiconductor-Controlled Rectifier.Appendices: A: PN Junction.B: MOS Junction.C: MS Junction.