Essentials of Semiconductor Device Physics
1st Edition
Published on 1. September 2022
Book
Paperback/Softback
240 pages
978-1-119-88411-8 (ISBN)
Description
An introductory semiconductor device physics textbook that is accessible to readers without a background in statistical physics
The subject of this book is the physics of semiconductor devices, which is an important topic in engineering and physics because it forms the background for electronic and optoelectronic devices, including solar cells. The author aims to provide students and teachers with a concise text that focuses on semiconductor devices and covers the necessary background in statistical physics.
This text introduces the key prerequisite knowledge in a simple, clear, and friendly manner. It distills the key concepts of semiconductor devices down to their essentials, enabling students to master this key subject in engineering, physics, and materials. The subject matter treated in this book is directly connected to the physics of p-n junctions and solar cells, which has become a topic of intense interest in the last decade. Sample topics covered within the text include:
Statistical physics, chemical potential, Fermi level, Fermi-Dirac distribution, drift current and diffusion current.
The physics of semiconductors, band theory and intuitive derivations of the concentration of charge carriers.
The p-n junction, with qualitative analysis preceding the mathematical descriptions.
A derivation of the current vs voltage relation in p-n junctions (Shockley's equation).
Important applications of p-n junctions, including solar cells
The two main types of transistors: Bipolar Junction Transistors (BJT) and Metal Oxide Semiconductor Field Effect Transistors (MOSFET)
For students and instructors, it may be used as a primary textbook for an introductory semiconductor device physics course and is suitable for a course of approximately 30-50 hours. Scientists studying and researching semiconductor devices in general, and solar cells in particular, will also benefit from the clear and intuitive explanations found in this book.
The subject of this book is the physics of semiconductor devices, which is an important topic in engineering and physics because it forms the background for electronic and optoelectronic devices, including solar cells. The author aims to provide students and teachers with a concise text that focuses on semiconductor devices and covers the necessary background in statistical physics.
This text introduces the key prerequisite knowledge in a simple, clear, and friendly manner. It distills the key concepts of semiconductor devices down to their essentials, enabling students to master this key subject in engineering, physics, and materials. The subject matter treated in this book is directly connected to the physics of p-n junctions and solar cells, which has become a topic of intense interest in the last decade. Sample topics covered within the text include:
Statistical physics, chemical potential, Fermi level, Fermi-Dirac distribution, drift current and diffusion current.
The physics of semiconductors, band theory and intuitive derivations of the concentration of charge carriers.
The p-n junction, with qualitative analysis preceding the mathematical descriptions.
A derivation of the current vs voltage relation in p-n junctions (Shockley's equation).
Important applications of p-n junctions, including solar cells
The two main types of transistors: Bipolar Junction Transistors (BJT) and Metal Oxide Semiconductor Field Effect Transistors (MOSFET)
For students and instructors, it may be used as a primary textbook for an introductory semiconductor device physics course and is suitable for a course of approximately 30-50 hours. Scientists studying and researching semiconductor devices in general, and solar cells in particular, will also benefit from the clear and intuitive explanations found in this book.
More details
Language
English
Place of publication
Hoboken
United States
Publishing group
John Wiley and Sons Ltd
Target group
Professional and scholarly
Dimensions
Height: 235 mm
Width: 156 mm
Thickness: 12 mm
Weight
397 gr
ISBN-13
978-1-119-88411-8 (9781119884118)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Emiliano R. Martins
Essentials of Semiconductor Device Physics
E-Book
06/2022
1st Edition
Wiley
€62.99
Available for download
Emiliano R. Martins
Essentials of Semiconductor Device Physics
E-Book
06/2022
1st Edition
Wiley
€62.99
Available for download
Person
Emiliano R. Martins obtained his PhD in 2014 from the University of St. Andrews (UK) in the field of photonics, which deals with the interaction between light and matter in semiconductor devices. His research field involves solar cells and other optoelectronic devices and he has been teaching a course on semiconductor device physics since 2016 at the University of Sao Paulo in Brazil. He has written unpublished books for other undergraduate disciplines that he teaches, including signals and systems and digital signal processing.
Content
Preface
1 Concepts of Statistical Physics
1.1 Introduction
1.2 Thermal Equilibrium
1.3 Partition function - Part I
1.4 Diffusive equilibrium and the chemical potential
1.5 The partition function, Part II
1.6 Example of application: energy and number of elements of a system
1.7 The Fermi-Dirac distribution
1.8 Analogy between the systems "box" and "coins"
1.9 Concentration of electrons and Fermi level
1.10 Transport
1.11 Relationship between current and concentration of particles (continuity equation)
1.12 Suggestions for further reading
1.13 Exercises
2 - Semiconductors
2.1 Band Theory
2.2 Electrons and holes
2.3 Concentration of free electrons
2.4 Density of states
2.5 Concentration of holes and Fermi level
2.6 Extrinsic semiconductors (doping)
2. 7 Exercises
3 Introduction to semiconductor devices: the p-n junction
3.1 p-n junction in thermodynamic equilibrium - qualitative description
3.2 p-n junction in thermodynamic equilibrium - quantitative description
3.3 Systems outside thermodynamic equilibrium: the quasi-Fermi levels.
3.4 Qualitative description of the relationship between current and voltage in a p-n junction
3.5 The current vs voltage relationship in a p-n junction (Shockley's equation)
3.6 Suggestions for further reading
3.7 Exercises
4 Photovoltaic devices (mainly solar cells)
4.1 Solar cells and photodetectors
4.2 Physical principles
4.3 The equivalent circuit
4.4 The I x V curve and the fill-factor
4.5 Efficiency of solar cells and the theoretical limit
4.6 Connections of solar cells
4.7 Suggestions for further reading
4.8 Exercises
5 Transistors
5.1 The Bipolar Junction Transistor (BJT)
5.1.1 Physical principles of the BJT
5.1.2 The beta parameter and the relationship between emitter, collector and base currents
5.1.3 Relationship between IC and VCE and the Early effect
5.1.4 The BJT as an amplifier
5.2 The MOSFET
5.2.1 Physical principles
5.2.3 Examples of applications of MOSFETS: logic inverters and logic gates
5.3 Suggestions for further reading
5.4 Exercises
Appendix: Geometrical interpretation of the chemical potential and free energy
1 Concepts of Statistical Physics
1.1 Introduction
1.2 Thermal Equilibrium
1.3 Partition function - Part I
1.4 Diffusive equilibrium and the chemical potential
1.5 The partition function, Part II
1.6 Example of application: energy and number of elements of a system
1.7 The Fermi-Dirac distribution
1.8 Analogy between the systems "box" and "coins"
1.9 Concentration of electrons and Fermi level
1.10 Transport
1.11 Relationship between current and concentration of particles (continuity equation)
1.12 Suggestions for further reading
1.13 Exercises
2 - Semiconductors
2.1 Band Theory
2.2 Electrons and holes
2.3 Concentration of free electrons
2.4 Density of states
2.5 Concentration of holes and Fermi level
2.6 Extrinsic semiconductors (doping)
2. 7 Exercises
3 Introduction to semiconductor devices: the p-n junction
3.1 p-n junction in thermodynamic equilibrium - qualitative description
3.2 p-n junction in thermodynamic equilibrium - quantitative description
3.3 Systems outside thermodynamic equilibrium: the quasi-Fermi levels.
3.4 Qualitative description of the relationship between current and voltage in a p-n junction
3.5 The current vs voltage relationship in a p-n junction (Shockley's equation)
3.6 Suggestions for further reading
3.7 Exercises
4 Photovoltaic devices (mainly solar cells)
4.1 Solar cells and photodetectors
4.2 Physical principles
4.3 The equivalent circuit
4.4 The I x V curve and the fill-factor
4.5 Efficiency of solar cells and the theoretical limit
4.6 Connections of solar cells
4.7 Suggestions for further reading
4.8 Exercises
5 Transistors
5.1 The Bipolar Junction Transistor (BJT)
5.1.1 Physical principles of the BJT
5.1.2 The beta parameter and the relationship between emitter, collector and base currents
5.1.3 Relationship between IC and VCE and the Early effect
5.1.4 The BJT as an amplifier
5.2 The MOSFET
5.2.1 Physical principles
5.2.3 Examples of applications of MOSFETS: logic inverters and logic gates
5.3 Suggestions for further reading
5.4 Exercises
Appendix: Geometrical interpretation of the chemical potential and free energy