
Defects and Synchrotron X-Ray Topography in Silicone-Carbide Based Devices
Trans Tech Publications Ltd (Publisher)
Published on 6. July 2023
Book
Paperback/Softback
152 pages
978-3-0364-0332-8 (ISBN)
Description
The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers.
The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers.
More details
Series
Language
English
Place of publication
Zurich
Switzerland
Target group
Professional and scholarly
Illustrations
Illustrations, unspecified
Dimensions
Height: 240 mm
Width: 170 mm
Thickness: 8 mm
Weight
400 gr
ISBN-13
978-3-0364-0332-8 (9783036403328)
DOI
10.4028/b-4J36mf
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions

Juraj Marek | Gregor Pobegen | Ulrike Grossner
Defects and Synchrotron X-Ray Topography in Silicone-Carbide Based Devices
E-Book
06/2023
Trans Tech Publications Ltd
€133.75
Available for download
Content
<ul><li>Preface</li><li>Chapter 1: Defects in Devices on Silicon Carbide</li><li>Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials</li><li>Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices</li><li>Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-Si?</li><li>Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC</li><li>Stacking Faults Originating from Star-Defects in 4H-SiC</li><li>P-Type Impurities in 4H-SiC Calculated Using Density Functional Theory</li><li>The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center</li><li>Chapter 2: Synchrotron X-ray Topography in Research of Silicone Carbide-Based Devices</li><li>Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography</li><li>Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers</li><li>Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements</li><li>Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography</li><li>Chapter 3: Research and Designing of Machines and Equipment</li><li>A Study on Coldflame Propagation Characteristics Applying Amplified Ignition Source to Overcome Landfill gas's Flame Retardant Limit</li><li>Thermal Effect of Bobbin Tool Friction Stir Welding on the Mechanical Behavior of High Density Polyethylene Sheets: Experimental Study</li><li>Hydrodynamic Stability Analysis for MHD Casson Fluid Flow through a Restricted Channel</li><li>Optimization of Aircraft Fuel Dump Rate towards the Mitigation of Post-Impact Fire</li></ul>