
TSV 3D RF Integration
High Resistivity Si Interposer Technology
Elsevier (Publisher)
Published on 27. April 2022
Book
Paperback/Softback
292 pages
978-0-323-99602-0 (ISBN)
Description
TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters.
A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology.
A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology.
More details
Language
English
Place of publication
Philadelphia
United States
Target group
Professional and scholarly
Engineers in microelectronics such as advanced package technology for 5G RF modules; graduate students working on microelectronics.
Product notice
Paperback (trade)
Dimensions
Height: 235 mm
Width: 191 mm
Thickness: 15 mm
Weight
507 gr
ISBN-13
978-0-323-99602-0 (9780323996020)
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Schweitzer Classification
Other editions
Additional editions

E-Book
04/2022
Elsevier
€220.00
Available for download
Persons
Shenglin Ma is Associate Professor in the Department of Mechanical and Electrical Engineering at Xiamen University, China. He received his PhD from Peking University and has also been a guest researcher with the National Key Laboratory of Science and Technology in Micro/Nano Fabrication at Peking University. He has over 50 publications and 20 patents to his name, and his research focuses on TSV based 3D integration technology, MEMS and its applications. YuFeng Jin is a Professor at Peking University, China. He also directed the National Key Laboratory of Science and Technology on Micro/Nano Fabrication for a number of years. He received his PhD from Southeast University, China. He has written three books on advanced packing technologies, and his research focus includes MEMS sensors and TSV related 3D integration of microsystems.
Author
Associate Professor, Department of Mechanical and Electrical Engineering, Xiamen University, China
Professor, Peking University, China
Content
1. Introduction to HR-Si Interposer Technology
2. Design, process and electrical verification of HR-Si interposer
3. Design, verification and optimization of novel vertical RF transmission structure in HR-Si interposer
4. HR-Si TSV integrated inductor
5. Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer
6. 3D heterogeneous RF integration oriented HR-Si interposer embedded with microchannel
7. Patch Antenna in Stacked HR-Si interposers
8. Through Glass Via Technology
9. Conclusion and outlook
2. Design, process and electrical verification of HR-Si interposer
3. Design, verification and optimization of novel vertical RF transmission structure in HR-Si interposer
4. HR-Si TSV integrated inductor
5. Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer
6. 3D heterogeneous RF integration oriented HR-Si interposer embedded with microchannel
7. Patch Antenna in Stacked HR-Si interposers
8. Through Glass Via Technology
9. Conclusion and outlook