Power, Thermal, Noise, and Signal Integrity Issues on Substrate/Interconnects Entanglement
1st Edition
Published on 28. March 2019
Book
Hardback
226 pages
978-0-367-02343-0 (ISBN)
Description
As demand for on-chip functionalities and requirements for low power operation continue to increase as a result of the emergence in mobile, wearable and internet-of-things (IoT) products, 3D/2.5D have been identified as an inevitable path moving forward. As circuits become more and more complex, especially three-dimensional ones, new insights have to be developed in many domains, including electrical, thermal, noise, interconnects, and parasites. It is the entanglement of such domains that begins the very key challenge as we enter in 3D nano-electronics. This book aims to develop this new paradigm, going to a synthesis beginning between many technical aspects.
More details
Language
English
Place of publication
London
United Kingdom
Publishing group
Taylor & Francis Ltd
Target group
College/higher education
Illustrations
100 s/w Abbildungen
100 Illustrations, black and white
Dimensions
Height: 234 mm
Width: 156 mm
Weight
510 gr
ISBN-13
978-0-367-02343-0 (9780367023430)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Yue Ma | Christian Gontrand
Power, Thermal, Noise, and Signal Integrity Issues on Substrate/Interconnects Entanglement
E-Book
03/2019
1st Edition
CRC Press
€73.99
Available for download
Yue Ma | Christian Gontrand
Power, Thermal, Noise, and Signal Integrity Issues on Substrate/Interconnects Entanglement
E-Book
03/2019
1st Edition
CRC Press
€73.99
Available for download
Persons
MA Yue has got engineer's and master's degrees in electrical and computer engineering from the Ecole Centrale de Pekin and Beihang university, respectively His PhD, obtained at the Institute des Nanotechnologies de Lyon (INL) in the university of Lyon, INSA, France, concerns the field of micro-electronics: First and second order electro-thermal parameters for3D circuits .His scientific interests include mathematics modeling, integrated circuits and systems, and computer-aided IC design, with theatrical and practical issues in numerical simulation methods, applied especially to 3D ICs. He..
Christian GONTRAND was born in Montpellier, France, on February 21, 1955.
He received the M.S, Ph.D and "State Doctorat" (Habilitation Diploma) degree, respectively in 1977, 1982 and 1987, in electronics, from the Universite des Sciences et Techniques du Languedoc, Montpellier , France.
From 1982 to 1984, He has been working with the Thomson "Laboratoire Central de Recherche"(LCR), Orsay, where his areas of interest included theoretical (electrical transport) and experimental (noise) of microwave devices (TEGFETs/HEMTs).
From 1988, he joined the laboratoire de Physique de la Matiere (LPM/INSA), Villeurbanne, as a Research Assistant Professor. From 1988 to 1996, He had the technical charge?of the new "Centre de Microelectronique de la Region Lyonnaise" (CIMIRLY), and worked on new RF compatible silicon devices, in collaboration with the Centre National des Etudes en Telecommunication (CNET), Meylan,France.
From 1997 to 2001, as a Professor in semiconductor devices and circuits, he was at the head of the team "Smart System Integration", at the "Centre de Genie Electrique de Lyon" (CEGELY/AMPERE). From 2002, he was at the Head of the axis "Radiofrequency Devices, Circuits and Systems" of DE team of the Lyon Institute of Nanotechnology, dealing with noises or parasitic disturbances in mixed complex 2D and 3D RF circuits and systems.
Christian GONTRAND was born in Montpellier, France, on February 21, 1955.
He received the M.S, Ph.D and "State Doctorat" (Habilitation Diploma) degree, respectively in 1977, 1982 and 1987, in electronics, from the Universite des Sciences et Techniques du Languedoc, Montpellier , France.
From 1982 to 1984, He has been working with the Thomson "Laboratoire Central de Recherche"(LCR), Orsay, where his areas of interest included theoretical (electrical transport) and experimental (noise) of microwave devices (TEGFETs/HEMTs).
From 1988, he joined the laboratoire de Physique de la Matiere (LPM/INSA), Villeurbanne, as a Research Assistant Professor. From 1988 to 1996, He had the technical charge?of the new "Centre de Microelectronique de la Region Lyonnaise" (CIMIRLY), and worked on new RF compatible silicon devices, in collaboration with the Centre National des Etudes en Telecommunication (CNET), Meylan,France.
From 1997 to 2001, as a Professor in semiconductor devices and circuits, he was at the head of the team "Smart System Integration", at the "Centre de Genie Electrique de Lyon" (CEGELY/AMPERE). From 2002, he was at the Head of the axis "Radiofrequency Devices, Circuits and Systems" of DE team of the Lyon Institute of Nanotechnology, dealing with noises or parasitic disturbances in mixed complex 2D and 3D RF circuits and systems.
Content
General Information, Substrate Noise in Mixed-Signal Ic's in a Silicon Process, Efficient and Simple Compact Modeling of Interconnects, Electro-Thermal Modeling of Substrate, Substrate noise and parasites: towards 3D, General Conclusion, References, Index