
Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990
Symposium Held April 10-12, 2007, San Francisco, California, U.S.A.
Materials Research Society (Publisher)
Published on 12. September 2007
Book
Hardback
360 pages
978-1-55899-950-3 (ISBN)
Article exhausted; check for reprint
Description
In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.
In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.
In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.
More details
Series
Language
English
Place of publication
New York
United States
Target group
Professional and scholarly
Illustrations
Worked examples or Exercises
Dimensions
Height: 229 mm
Width: 152 mm
Thickness: 21 mm
Weight
650 gr
ISBN-13
978-1-55899-950-3 (9781558999503)
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Other editions
New editions

Qinghuang Lin | E. Todd Ryan | Wen-li Wu
Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990
Symposium Held April 10-12, 2007, San Francisco, California, U.S.A.
Book
06/2014
Cambridge University Press
€42.00
Shipment within 15-20 days
Additional editions

Qinghuang Lin | E. Todd Ryan | Wen-li Wu
Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990
Symposium Held April 10-12, 2007, San Francisco, California, U.S.A.
Book
06/2014
Cambridge University Press
€42.00
Shipment within 15-20 days
Persons
Editor
IBM T J Watson Research Center, New York
National Institute of Standards and Technology, Maryland
Seoul National University