
Properties of Advanced Semiconductor Materials
GaN, AIN, InN, BN, SiC, SiGe
Wiley (Publisher)
Published on 23. January 2001
Book
Hardback
216 pages
978-0-471-35827-5 (ISBN)
Description
Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material.
* Reviews traditional semiconductor materials as well as new, advanced semiconductors.
* Essential authoritative handbook on the properties of semiconductor materials.
Reviews / Votes
"Six contributed chapters describe the key properties of emerging semiconductor materials systems with exciting potential..." (SciTech Book News Vol. 25, No. 2 June 2001)More details
Edition
1. Auflage
Language
English
Place of publication
United States
Publishing group
John Wiley & Sons Inc
Target group
College/higher education
Professional and scholarly
Dimensions
Height: 24 cm
Width: 16 cm
Thickness: 1.6 cm
Weight
454 gr
ISBN-13
978-0-471-35827-5 (9780471358275)
Schweitzer Classification
Persons
Michael E. Levinshtein is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.
Sergey L. Rumyantsev is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.
Michael S. Shur is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.
Sergey L. Rumyantsev is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.
Michael S. Shur is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.
Editor
The Ioffe Institute, Russian Academy of Sciences
The Ioffe Institute, Russian Academy of Sciences
Rensselaer Polytechnic Institute
Content
Contributors.
Preface.
Gallium Nitride (GaN) (V. Bougrov, et al.).
Aluminum Nitride (AIN) (Y. Goldberg).
Indium Nitride (InN) (A. Zubrilov).
Boron Nitride (BN) (S. Rumyantsev, et al.).
Silicon Carbide (SiC) (Y. Goldberg, et al.).
Silicon-Germanium (Si_1-xGe_x) (F. Schäffler).
Appendix 1: Basic Physical Constants.
Appendix 2: Periodic Table of the Elements.
Appendix 3: Rectangular Coordinates for Hexagonal Crystal.
Appendix 4: The First Brillouin Zone for Wurtzite Crystal.
Appendix 5: Zinc Blende Structure.
Appendix 6: The First Brillouin Zone for Zinc Blende Crystal.
Additional References.