
Materials Modification by High-fluence Ion Beams
Kluwer Academic Publishers
Will be published approx. on 31. December 1988
Book
Hardback
606 pages
978-0-7923-0035-9 (ISBN)
Description
Proceedings of the NATO Advanced Study Institute on Materials Modification by High-Fluence Ion Beams, Viana do Castelo, Portugal, August 24-September 4, 1987
More details
Series
Edition
1989 ed.
Language
English
Place of publication
Dordrecht
Netherlands
Target group
College/higher education
Professional and scholarly
Research
Product notice
sewn/stitched
Cloth over boards
Illustrations
606 p.
Dimensions
Height: 0 mm
Width: 0 mm
Weight
1230 gr
ISBN-13
978-0-7923-0035-9 (9780792300359)
DOI
10.1007/978-94-009-1267-0
Schweitzer Classification
Other editions
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Roger Kelly | M. Fernanda da Silva
Materials Modification by High-fluence Ion Beams
E-Book
12/2012
Springer
€53.49
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Roger Kelly | M. Fernanda da Silva
Materials Modification by High-fluence Ion Beams
Book
09/2011
Springer
€53.49
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Content
Overview.- High-fluence ion irradiation: an overview.- Sputtering.- Historical overview on the fundamentals of sputtering.- Depth of origin of sputtered atoms.- Magnetron sputtering: physics and design.- On the formation and characterization of microcrystalline Si:H prepared by RF magnetron sputtering.- Depth profiling of Ta2O5 thin layer on Ta foil by ion scattering spectrometry and ion sputtering.- Bombardment of alkali and alkali-earth halides by ions and electrons.- Effects of Ar+ angle-of-incidence on the etching of Si with Cl2 and low-energy Ar+ ions.- Irradiation effects in ices by energetic ions.- Ion formation by very high energetic ion impact on solids.- Simulation.- Computer simulation of stopping and sputtering.- Computer simulation of ion-beam mixing of cobalt on silicon.- On the fractal nature of collision cascades.- Simple statistical models for erosion and growth.- Defects and Disorder.- Defects and defect processes.- Fast-ion-induced defects in silicon studied by deep level transient spectroscopy.- Low-energy (300 eV - 10 keV) Ar+ and Cl+ ion irradiation of (100) Si.- The charge state of iron implanted into sapphire.- Implantation and Mixing.- Direct and recoil implantation, and collisional ion-beam mixing: recent low-temperature experiments.- Mixing by defect-assisted migration of thin markers in solids.- The TRIUMF optically pumped polarized H- ion source.- Some high-current ion sources for materials modification.- Compositional and Chemical Changes.- Bombardment-induced compositional change with alloys, oxides, and oxysalts. I The role of the surface binding energy.- Investigation of preferential sputtering mechanisms by analysing the sample surface and near-surface region with AES and ISS.- High-fluence implantation in insulators. Part I:Compositional, mechanical, and optical changes.- High-fluence implantation in insulators. Part II: Chemical changes.- Electrochemical and corrosion behaviour of ion and laser-beam modified metal surfaces.- Structural Changes.- Ion-irradiation induced phase changes in metallic systems.- The topography of ion-bombarded surfaces.- Cultured blisters.- Electronic Changes.- Electronic properties of ion-implanted metals.- Mechanical Changes.- Tribology of implantation bilayers.- Adhesive and abrasive wear study of nitrogen implanted steels.- Effect of ?-recoil damage on the elastic moduli of zircon and tourmaline.- Depth-resolved investigation of structural transformations and hardness variations in implanted films on bulk samples.- Laser Processing.- Laser etching as an alternative.- Pulsed laser irradiation of heavily Ge implanted silicon.