SiGe Based Technologies

Part 1 Quantum wells: systematic blue shift of exciton luminescence in strained Si1-xGex/Si quantum well structures grown by gas source silicon molecular beam epitaxy, S. Fukatsu et al; magnetotransport studies of remote doped Si/Si1-xGex heterostructures grown on relaxed SiGe buffer layers, D. Toebben et al; band gap luminescence in pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy, J. Brunner et al. Part 2 Growth methods: the deposition of Si-Ge strained layers from GeH4, SiH2Cl2, SiH4 and Si2H6, D.J. Meyer and T.I. Kamins; a comparative study of heavy boron doping in silicon and Si1-xGex layers grown by molecular beam epitaxy, M.R. Sardela et al; crystallization of amorphous Gex/Si1-x films on SiO2, F. Eldelman et al. Part 3 Growth and characterization: photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition, G. Bremond et al; evolution of sufrace morphology and strain during SiGe epitaxy, A.J. Pidduck et al; observation of electroluminescence from pseudomorphic Si1-xGex alloy layers, U. Mantz et al. Part 4 Surfaces and interfaces: atomistic processes of surface segregation during Si-Ge MBE growth, D.E. Jesson et al; temperature-dependent growth anisotropy observed on Si(001) surfaces during silicon gas source molecular beam epitaxy using disilane, S.M. Mokler et al; the electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE, J.C. Brighten et al. Part 5 Processing/devices: normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1-x/Si, R. People et al; 50 GHz Si1-xGex heterobipolar transistor - growth of the complete layer sequence by molecular beam epitaxy, E. Kasper et al; strain relaxation in epitaxial Si1-xGex/Si(100) layers induced by reaction with palladium, A. Buxbaum et al. Part 6 Strain/defects: the energy of systems of misfit dislocations in epitaxial strained layers, A. Atkinson and S.C. Jain; crystallization kinetics of boron- and germanium-implanted [100] Si - a balance between doping and strain effects, F. Corni et al; experimental study of Si-Ge tetrahedral solid solution in Ni-Co-Mg talcs, F. Martin et al. Part 7 Porous silicon: electroluminescent performance of porous silicon, F. Kozlowski et al; bright visible photoluminescence in thin silicon films, T.P. Pearsall et al. Part 8 Ultrathin Si/Ge superlattices: quantitative theory of optical properties of Si-Ge heterostructures, M. Jaros et al; in-plane Raman scattering of [001]-grown Si/Ge superlattices R. Schorer et al.