
Low Power and Reliable SRAM Memory Cell and Array Design
Springer (Publisher)
Published on 27. November 2013
Book
Paperback/Softback
XII, 144 pages
978-3-642-27018-5 (ISBN)
Description
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
More details
Series
Edition
2011 ed.
Language
English
Place of publication
Berlin
Germany
Publishing group
Springer Berlin
Target group
Professional and scholarly
Research
Illustrations
XII, 144 p.
Dimensions
Height: 235 mm
Width: 155 mm
Thickness: 9 mm
Weight
248 gr
ISBN-13
978-3-642-27018-5 (9783642270185)
DOI
10.1007/978-3-642-19568-6
Schweitzer Classification
Other editions
Additional editions

Koichiro Ishibashi | Kenichi Osada
Low Power and Reliable SRAM Memory Cell and Array Design
Book
08/2011
Springer
€106.99
Shipment within 7-9 days
Content
Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies