Small Swing Switches
Will be published approx. on 1. March 2013
Book
Hardback
270 pages
978-0-521-76358-5 (ISBN)
Description
* Describes and evaluates the fundamental principles, modelling, simulation, design and fabrication of a range of different types of small swing switch as enablers of energy-efficient ICs and systems * Provides an in-depth overview of the existing solutions for steep subthreshold switches * Covers impact ionization MOS, tunnel FETs, negative capacitance FETs and NEM relays * Critically discusses the merits of each technology based on numerical simulations and experiments * Includes chapters on nanoscale silicon CMOS and silicon nanowire technology
More details
Language
English
Place of publication
Cambridge
United Kingdom
Target group
Professional and scholarly
Illustrations
Worked examples or Exercises; 10 Tables, black and white; 150 Line drawings, unspecified
Dimensions
Height: 247 mm
Width: 174 mm
ISBN-13
978-0-521-76358-5 (9780521763585)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Persons
Adrian M. Ionescu is an Associate Professor at the Ecole Polytechnique Federale de Lausanne (EPFL), where he is the Director of the Nanoelectronic Devices Laboratory. Kathy Boucart is currently studying for her Ph.D. at the Nanoelectronic Devices Laboratory of the Ecole Polytechnique Federale de Lausanne. Kirsten E. Moselund is a Research Staff Member in the Nanoscale Electronics Group at IBM Research, Zurich. Vincent Pott is a Postdoctoral Associate at the University of California, Berkeley.
Content
Foreword; 1. NanoCMOS; 2. Silicon nanowires; 3. Small swing switch - impact ionization MOS; 4. Small swing switch - tunnel FET; 5. Small swing switch - negative capacitance FET; Small swing switch - MEM and NEM devices; Overview and conclusion.